Comparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis

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dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.contributor.authorYilmaz, S.
dc.contributor.authorAtasoy, Y.
dc.contributor.authorTomakin, M.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:36:56Z
dc.date.available2025-01-06T17:36:56Z
dc.date.issued2015
dc.description.abstractIn the present study, the spray pyrolysis technique was used to prepare pure CdS, 4 at.% Al-doped CdS, 4 at.% Na-doped CdS and (4 at.% Al, 4 at.% Na)-co-doped CdS thin films. It was found from X-ray diffraction data that all the specimens showed hexagonal wurtzite structure with the preferred orientation of (101). Scanning electron microscopy results indicated that 4 at.% Al-doping caused a grain growth in the morphology of CdS thin films whereas the 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping led to porous structure with small grains. The band gap value of CdS thin films increased to 2.42 eV after 4 at.% Al-doping. However, it reduced to 2.30 eV and 2.08 eV for 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping, respectively. The room temperature photoluminescence measurements illustrated that the peak intensity of CdS thin films enhanced with 4 at.% Al-doping while 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping caused a decline in the intensity. The maximum carrier concentration and minimum resistivity were obtained for 4 at.% Al-doped CdS thin films, which is associated with the grain growth. Furthermore, (4 at.% Al, 4 at.% Na)-co-doping gave rise to a slight reduction in the carrier concentration and a slight increment in the resistivity. As a result, it can be said that 4 at.% Al-doped CdS thin films exhibited the best electrical and optical properties, which is important for the optoelectronic applications. (C) 2015 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.spmi.2015.09.021
dc.identifier.endpage307
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-84949623317
dc.identifier.scopusqualityN/A
dc.identifier.startpage299
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2015.09.021
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2040
dc.identifier.volume88
dc.identifier.wosWOS:000367276600036
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAcademic Press Ltd- Elsevier Science Ltd
dc.relation.ispartofSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectCdS
dc.subjectThin films
dc.subjectCo-doping of (Al and Na)
dc.subjectPL
dc.subjectElectrical properties
dc.titleComparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis
dc.typeArticle

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