Comparative studies of CdS, CdS:Al, CdS:Na and CdS:(Al-Na) thin films prepared by spray pyrolysis
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Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Academic Press Ltd- Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In the present study, the spray pyrolysis technique was used to prepare pure CdS, 4 at.% Al-doped CdS, 4 at.% Na-doped CdS and (4 at.% Al, 4 at.% Na)-co-doped CdS thin films. It was found from X-ray diffraction data that all the specimens showed hexagonal wurtzite structure with the preferred orientation of (101). Scanning electron microscopy results indicated that 4 at.% Al-doping caused a grain growth in the morphology of CdS thin films whereas the 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping led to porous structure with small grains. The band gap value of CdS thin films increased to 2.42 eV after 4 at.% Al-doping. However, it reduced to 2.30 eV and 2.08 eV for 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping, respectively. The room temperature photoluminescence measurements illustrated that the peak intensity of CdS thin films enhanced with 4 at.% Al-doping while 4 at.% Na-doping and (4 at.% Al, 4 at.% Na)-co-doping caused a decline in the intensity. The maximum carrier concentration and minimum resistivity were obtained for 4 at.% Al-doped CdS thin films, which is associated with the grain growth. Furthermore, (4 at.% Al, 4 at.% Na)-co-doping gave rise to a slight reduction in the carrier concentration and a slight increment in the resistivity. As a result, it can be said that 4 at.% Al-doped CdS thin films exhibited the best electrical and optical properties, which is important for the optoelectronic applications. (C) 2015 Elsevier Ltd. All rights reserved.
Açıklama
Anahtar Kelimeler
CdS, Thin films, Co-doping of (Al and Na), PL, Electrical properties
Kaynak
Superlattices and Microstructures
WoS Q Değeri
Q2
Scopus Q Değeri
N/A
Cilt
88
