A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE

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dc.authoridSerincan, Ugur/0000-0002-6305-4343
dc.authoridArpapay, Burcu/0000-0002-0784-560X
dc.authoridERKEN, Ozge/0000-0002-6493-3059
dc.authoridTAYKURT DADAY, Mine/0000-0002-2440-5200
dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridGumus, Cebrail/0000-0003-1629-2338
dc.authoridHenini, Mohamed/0000-0001-9414-8492
dc.contributor.authorGunes, M.
dc.contributor.authorErken, O.
dc.contributor.authorGumus, C.
dc.contributor.authorYalaz, E.
dc.contributor.authorPesen, E.
dc.contributor.authorUkelge, M. O.
dc.contributor.authorArpapay, B.
dc.date.accessioned2025-01-06T17:44:48Z
dc.date.available2025-01-06T17:44:48Z
dc.date.issued2016
dc.description.abstractOptical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral photoluminescence (PL) measurement was performed at temperatures between 15 and 300K. The PL measurements showed that band gap of the alloy decreases with increasing lattice temperature regardless the growth orientations. S-shaped temperature dependence has been observed in the samples grown on (1 0 0), (3 1 1)B, (4 1 1)B orientations. PL emission energy is fitted with Varshni and Bose-Einstein Approximation to determine Debye temperature (beta), (Theta(E)) and thermal expansion coefficient (alpha), the exciton-phonon coupling strength (a(B)).
dc.description.sponsorshipAdana Science and Technology University [MUHDBF.MLZM.2014-13]; Scientific and Technology Research Council of Turkey (TUBITAK) [114F294]; FAPESP [12/24055-6]; PVE-CAPES [A067_2013]
dc.description.sponsorshipThis work was supported by Adana Science and Technology University [Project Number MUHDBF.MLZM.2014-13]; The Scientific and Technology Research Council of Turkey (TUBITAK) [Project Number 114F294]. We also acknowledge Brazilian Agencies FAPESP grant 12/24055-6 and PVE-CAPES grant A067_2013 for financial support.
dc.identifier.doi10.1080/14786435.2015.1122244
dc.identifier.endpage229
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue3
dc.identifier.scopus2-s2.0-84958920095
dc.identifier.scopusqualityQ3
dc.identifier.startpage223
dc.identifier.urihttps://doi.org/10.1080/14786435.2015.1122244
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3171
dc.identifier.volume96
dc.identifier.wosWOS:000371037600001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofPhilosophical Magazine
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectVarshni law
dc.subjectBose-Einstein
dc.subjectGaMnAs
dc.subjectquantum well
dc.titleA comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE
dc.typeArticle

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