A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE
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Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Taylor & Francis Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Optical properties of diluted magnetic semiconductor Ga0.999Mn0.001As/AlAs quantum well structures grown on (1 0 0 ), (1 1 0), (3 1 1)B and (4 1 1)B by molecular beam epitaxy are reported. Temperature-dependent spectral photoluminescence (PL) measurement was performed at temperatures between 15 and 300K. The PL measurements showed that band gap of the alloy decreases with increasing lattice temperature regardless the growth orientations. S-shaped temperature dependence has been observed in the samples grown on (1 0 0), (3 1 1)B, (4 1 1)B orientations. PL emission energy is fitted with Varshni and Bose-Einstein Approximation to determine Debye temperature (beta), (Theta(E)) and thermal expansion coefficient (alpha), the exciton-phonon coupling strength (a(B)).
Açıklama
Anahtar Kelimeler
Varshni law, Bose-Einstein, GaMnAs, quantum well
Kaynak
Philosophical Magazine
WoS Q Değeri
Q2
Scopus Q Değeri
Q3
Cilt
96
Sayı
3
