The investigation of spray pyrolysis grown CdS thin films doped with flourine atoms
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Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Undoped and F-doped CdS thin films were succesfully grown on the glass substrates by the spray prolysis method. X-ray diffraction results showed that all the samples had hexagonal wurtzite structure with the (1 0 1) preferred orientation. It was found from scanning electron microscopy that an increase in the grain size was observed after F-doping. The band gap value of CdS thin films increased from 2.38 eV to 2.42 eV with the increase of F concentration from 0 to 6 at.%. The intensity of room temperature photoluminescence spectrum of undoped CdS thin films enhanced with the increment of F-doping amount that is related to the increase of point defects formed by the flourine atoms. Electrical measurements showed that the carrier concentration increased from 1.93 x 10(12) cm(-3) to 7.62 x 10(12) cm(-3) when CdS thin films were doped with 2 at.% F. However, further increase in F amount up to 6 at.% caused a decrease in the carrier concentration. On the other hand, resistivity value first decreased from 1.26 x 10(5) SZ cm to 8.54 x 10(4) SZ cm with the increase of F-doping up to 2 at.% and then increased to 1.65 x 10(5) SZ cm for 6 at.% F-doping. It can be concluded that 2 at.% F-doped CdS thin films exhibited the best electrical and optical properties, which is suitable for the application of thin film solar cells. (C) 2015 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
CdS: F, Thin films, SEM, Carrier concentration, Resistivity
Kaynak
Applied Surface Science
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
357
