Improvement in performance of SnSe-based photodetectors via post deposition sulfur diffusion

Basit Öğe Kaydı
dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.contributor.authorYilmaz, Salih
dc.contributor.authorBasol, Bulent M.
dc.contributor.authorPolat, Ismail
dc.contributor.authorOlgar, Mehmet Ali
dc.contributor.authorBayazit, Tugba
dc.contributor.authorKucukomeroglu, Tayfur
dc.contributor.authorBacaksiz, Emin
dc.date.accessioned2025-01-06T17:44:33Z
dc.date.available2025-01-06T17:44:33Z
dc.date.issued2024
dc.description.abstractThe work represents an enhancement in the photodetector properties of thermally evaporated SnSe thin films through both annealing and sulfurization processes. X-ray diffraction analysis showed the formation of SnSe 1-x S x alloy with a graded composition that was more S -rich near the surface when the sulfurization process was applied at 350 degrees C. Scanning electron microscopy results indicated that increasing the annealing temperature from 300 degrees C to 350 degrees C changed the microstructure greatly. When the sulfurization temperature was increased from 300 degrees C to 350 degrees C, the direct band gap of SnSe thin films decreased from 1.38 eV to 1.30 eV while the indirect band gap reduced from 0.91 eV to 0.71 eV. Raman spectra also confirmed the development of phase of SnSe 1-x S x for the sulfurized sample at 350 degrees C. Photocurrent-time curves of devices fabricated on all films demonstrated that sulfurization at high temperature increased the photocurrent values. It was further determined that devices made on sulfurized layers had smaller rise/fall times of 2.57/2.33 s compared to those fabricated on non-sulfurized films. The best responsivity and detectivity values were achieved as 2.07 x 10 -1 A/W and 1.19 x 10 7 Jones, respectively, for photodetectors fabricated on layers sulfurized at 350 degrees C.
dc.identifier.doi10.1016/j.sna.2024.115348
dc.identifier.issn0924-4247
dc.identifier.issn1873-3069
dc.identifier.scopus2-s2.0-85189753094
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.sna.2024.115348
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3079
dc.identifier.volume372
dc.identifier.wosWOS:001227693700001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSensors and Actuators A-Physical
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectSulfur diffusion
dc.subjectSnSe thin films
dc.subjectSnSe 1-x S x alloy
dc.subjectThermal evaporation
dc.subjectOptical properties
dc.subjectPhotodetectors
dc.titleImprovement in performance of SnSe-based photodetectors via post deposition sulfur diffusion
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu