Improvement in performance of SnSe-based photodetectors via post deposition sulfur diffusion
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Tarih
2024
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Sa
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The work represents an enhancement in the photodetector properties of thermally evaporated SnSe thin films through both annealing and sulfurization processes. X-ray diffraction analysis showed the formation of SnSe 1-x S x alloy with a graded composition that was more S -rich near the surface when the sulfurization process was applied at 350 degrees C. Scanning electron microscopy results indicated that increasing the annealing temperature from 300 degrees C to 350 degrees C changed the microstructure greatly. When the sulfurization temperature was increased from 300 degrees C to 350 degrees C, the direct band gap of SnSe thin films decreased from 1.38 eV to 1.30 eV while the indirect band gap reduced from 0.91 eV to 0.71 eV. Raman spectra also confirmed the development of phase of SnSe 1-x S x for the sulfurized sample at 350 degrees C. Photocurrent-time curves of devices fabricated on all films demonstrated that sulfurization at high temperature increased the photocurrent values. It was further determined that devices made on sulfurized layers had smaller rise/fall times of 2.57/2.33 s compared to those fabricated on non-sulfurized films. The best responsivity and detectivity values were achieved as 2.07 x 10 -1 A/W and 1.19 x 10 7 Jones, respectively, for photodetectors fabricated on layers sulfurized at 350 degrees C.
Açıklama
Anahtar Kelimeler
Sulfur diffusion, SnSe thin films, SnSe 1-x S x alloy, Thermal evaporation, Optical properties, Photodetectors
Kaynak
Sensors and Actuators A-Physical
WoS Q Değeri
N/A
Scopus Q Değeri
Q1
Cilt
372
