Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures

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dc.authoridGuina, Mircea/0000-0002-9317-8187
dc.authoridDonmez, Omer/0000-0002-7635-3991
dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridErol, Ayse/0000-0003-4196-1791
dc.contributor.authorDonmez, Omer
dc.contributor.authorSarcan, Fahrettin
dc.contributor.authorErol, Ayse
dc.contributor.authorGunes, Mustafa
dc.contributor.authorArikan, Mehmet Cetin
dc.contributor.authorPuustinen, Janne
dc.contributor.authorGuina, Mircea
dc.date.accessioned2025-01-06T17:38:06Z
dc.date.available2025-01-06T17:38:06Z
dc.date.issued2014
dc.description.abstractWe report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1-xInxNyAs1-y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-resolved Shubnikov de Haas (SdH) oscillations are observed at magnetic fields as low as 3 T and persist to temperatures as high as 20 K, which are used to determine effective mass, 2D carrier density, and Fermi energy. The analysis of temperature dependence of SdH oscillations revealed that the electron mass enhances with increasing nitrogen content. Furthermore, even the current theory of dilute nitrides does not predict a change in hole effective mass; nitrogen dependency of hole effective mass is found and attributed to both strain- and confinement-induced effects on the valence band. Both electron and hole effective masses are changed after thermal annealing process. Although all samples were doped with the same density, the presence of nitrogen in n-type material gives rise to an enhancement in the 2D electron density compared to the 2D hole density as a result of enhanced effective mass due to the effect of nitrogen on conduction band. Our results reveal that effective mass and 2D carrier density can be tailored by nitrogen composition and thermal annealing-induced effects.
dc.description.sponsorshipTUBITAK project [110 T874]; Istanbul University Scientific Research [IRP 9571]; Ministry of Development, Turkey [2010 K121050]
dc.description.sponsorshipThis work is supported by the TUBITAK project (project number 110 T874) and Istanbul University Scientific Research Projects Unit (project number IRP 9571) and The Ministry of Development, Turkey (project number 2010 K121050). We also acknowledge to the COST Action MP085 for enabling collaboration possibilities.
dc.identifier.doi10.1186/1556-276X-9-141
dc.identifier.issn1931-7573
dc.identifier.issn1556-276X
dc.identifier.pmid24661541
dc.identifier.scopus2-s2.0-84899641533
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1186/1556-276X-9-141
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2474
dc.identifier.volume9
dc.identifier.wosWOS:000334413300001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.indekslendigikaynakPubMed
dc.language.isoen
dc.publisherSpringeropen
dc.relation.ispartofNanoscale Research Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectGaInNAs
dc.subjectMagnetotransport
dc.subjectShubnikov de Haas
dc.subjectTransport
dc.subjectNitrogen-dependent effective mass
dc.titleMagnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures
dc.typeReview Article

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