Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures

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dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridErol, Ayse/0000-0003-4196-1791
dc.authoridGuina, Mircea/0000-0002-9317-8187
dc.authoridDonmez, Omer/0000-0002-7635-3991
dc.contributor.authorSarcan, F.
dc.contributor.authorDonmez, O.
dc.contributor.authorErol, A.
dc.contributor.authorGunes, M.
dc.contributor.authorArikan, M. C.
dc.contributor.authorPuustinen, J.
dc.contributor.authorGuina, M.
dc.date.accessioned2025-01-06T17:45:04Z
dc.date.available2025-01-06T17:45:04Z
dc.date.issued2013
dc.description.abstractNitrogen dependence of hole effective mass and hole mobility in p-type modulation doped Ga0.68In0.32NyAs1-y/GaAs quantum well structures with y = 0, 0.009, 0.012, 0.017 are investigated using magnetotransport and Hall effect measurements. Observed N-dependent reduction of the hole effective mass is explained by stronger confinement of holes. Hole effective mass is also found to have hole density dependence due to the strain-induced valance band non-parabolicity. A tendency to decrease in hole effective mass upon annealing can be attributed to the reduction of well width and/or decrease in hole density. A significant improvement in low temperature hole mobility is observed after annealing. (C) 2013 AIP Publishing LLC.
dc.description.sponsorshipTUBITAK project [110T874]; Istanbul University Scientific Research Projects Unit [IRP 9571, 20932]
dc.description.sponsorshipThis work is supported by the TUBITAK project (Project No. 110T874) and Istanbul University Scientific Research Projects Unit (Project No. IRP 9571 and 20932). We also acknowledge to the COST Action MP085 for enabling collaboration possibilities.
dc.identifier.doi10.1063/1.4819233
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issue8
dc.identifier.scopus2-s2.0-84883331123
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.4819233
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3276
dc.identifier.volume103
dc.identifier.wosWOS:000323788100043
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofApplied Physics Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectInterdıffusıon
dc.titleInfluence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures
dc.typeArticle

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