Exciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

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dc.authoridGuina, Mircea/0000-0002-9317-8187
dc.authoridAkyol, Mustafa/0000-0001-8584-0620
dc.authoridPrando, Gabriela Augusta/0000-0001-9977-6180
dc.authoridAlghamdi, Haifaa/0000-0003-2456-0419
dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridDe Giovanni Rodrigues, Ariano/0000-0003-0294-6775
dc.authoridGaleti, Helder/0000-0002-5217-8367
dc.contributor.authorPrando, G. A.
dc.contributor.authorOrsi Gordo, V.
dc.contributor.authorPuustinen, J.
dc.contributor.authorHilska, J.
dc.contributor.authorAlghamdi, H. M.
dc.contributor.authorSom, G.
dc.contributor.authorGunes, M.
dc.date.accessioned2025-01-06T17:37:46Z
dc.date.available2025-01-06T17:37:46Z
dc.date.issued2018
dc.description.abstractIn this work, we have investigated the structural and optical properties of GaAs(1-x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation.
dc.description.sponsorshipFundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [12/24055-6, 14/50513-7, 16/10668-7]; CNPq; CAPES; Scientific and Technological Research Council of Turkey (TUBITAK) [115F063]; Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [14/50513-7] Funding Source: FAPESP
dc.description.sponsorshipWe would like to acknowledge the financial supports from Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) grant numbers 12/24055-6, 14/50513-7 and 16/10668-7, CNPq, CAPES and the Scientific and Technological Research Council of Turkey (TUBITAK), project number 115F063.
dc.identifier.doi10.1088/1361-6641/aad02e
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.issue8
dc.identifier.scopus2-s2.0-85051332383
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1361-6641/aad02e
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2346
dc.identifier.volume33
dc.identifier.wosWOS:000439272000001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectexciton localization
dc.subjectstructural disorder
dc.subjectphotoluminescence
dc.subjectdilute bismide
dc.titleExciton localization and structural disorder of GaAs1-xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
dc.typeArticle

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