Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates

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dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridAlghamdi, Haifaa/0000-0003-2456-0419
dc.authoridHilska, Joonas/0000-0002-0595-8993
dc.authoridGuina, Mircea/0000-0002-9317-8187
dc.authoridGaleti, Helder/0000-0002-5217-8367
dc.authoridErol, Ayse/0000-0003-4196-1791
dc.authoridDonmez, Omer/0000-0002-7635-3991
dc.contributor.authorGunes, M.
dc.contributor.authorUkelge, M. O.
dc.contributor.authorDonmez, O.
dc.contributor.authorErol, A.
dc.contributor.authorGumus, C.
dc.contributor.authorAlghamdi, H.
dc.contributor.authorGaleti, H. V. A.
dc.date.accessioned2025-01-06T17:43:51Z
dc.date.available2025-01-06T17:43:51Z
dc.date.issued2018
dc.description.abstractIn this work, the electronic bandstructure of GaAs1-xBix/GaAs single quantum well (QW) samples grown by molecular beam epitaxy is investigated by photomodulated reflectance (PR) measurements as a function of Bi content (0.0065 <= x <= 0.0215) and substrate orientation. The Bi composition is determined via simulation of high-resolution x-ray diffraction measurement and is found to be maximized in the 2.15%Bi and 2.1%Bi samples grown on (100) and (311)B GaAs substrates. However, the simulations indicate that the Bi composition is not only limited in the GaAsBi QW layer but extends out of the GaAsBi QW towards the GaAs barrier and forms a GaAsBi epilayer. PR spectra are fitted with the third derivative function form (TDFF) to identify the optical transition energies. We analyze the TDFF results by considering strain-induced modification on the conduction band (CB) and splitting of the valence band (VB) due to its interaction with the localized Bi level and VB interaction. The PR measurements confirm the existence of a GaAsBi epilayer via observed optical transitions that belong to GaAsBi layers with various Bi compositions. It is found that both Bi composition and substrate orientation have strong effects on the PR signal. Comparison between TDFF and calculated optical transition energies provides a bandgap reduction of 92 meV/%Bi and 36 meV/%Bi and an interaction strength of the isolated Bi atoms with host GaAs valence band (C-BiM) of 1.7 eV and 0.9 eV for (100) and (311)B GaAs substrates, respectively.
dc.description.sponsorshipScientific Research Projects Coordination Unit of Istanbul University [ONAP-52321, FYD-2016-20128]; Scientific and Technical Research Council of Turkey (TUBITAK) [115F063]; FAPESP [16/10668-7, 14/50513-7]; European Research Council (ERC AdG AMETIST) [695116]; Academy of Finland [259111]; Academy of Finland (AKA) [259111] Funding Source: Academy of Finland (AKA); Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [14/50513-7] Funding Source: FAPESP
dc.description.sponsorshipThis work was partially supported by the Scientific Research Projects Coordination Unit of Istanbul University (ONAP-52321 and FYD-2016-20128) and supported by The Scientific and Technical Research Council of Turkey (TUBITAK) under Grant No. 115F063. YGG acknowledges the financial support from FAPESP (grants numbers 16/10668-7 and 14/50513-7). JP, JH and MC acknowledge the financial support from European Research Council (ERC AdG AMETIST, #695116) and the Academy of Finland (TransPhoton, #259111).
dc.identifier.doi10.1088/1361-6641/aaea2e
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.issue12
dc.identifier.scopus2-s2.0-85057810892
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1361-6641/aaea2e
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2833
dc.identifier.volume33
dc.identifier.wosWOS:000450238200001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectoriented GaAsBi
dc.subjecthigh-index substrate
dc.subjectphotomodulated reflectance
dc.subjectstrained quantum well
dc.subjecttype I band line-up
dc.titleOptical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates
dc.typeArticle

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