Determination of non-equilibrium electron energy and momentum relaxation rates in GaAs/AlGaAs multiple quantum well

Basit Öğe Kaydı
dc.contributor.authorGunes, M.
dc.date.accessioned2025-01-06T17:30:38Z
dc.date.available2025-01-06T17:30:38Z
dc.date.issued2014
dc.description.abstractThe results of the experimental techniques used in the determination of the power and momentum losses from a 2DEG were presented. These are the hot electron photoluminescence (HEPL), and mobility mapping techniques which involve the measurements of PL in synchronization with applied voltage pulse, high field I-V and Hall mobility. In the presence of electric field the carriers are heated, and the high energy-tail of the PL, which is described by Maxwell-Boltzmann distribution, can be used to obtain the temperature of the non-equilibrium carriers. The second technique called mobility mapping is used to verify the temperature of the non-equilibrium carriers.
dc.identifier.endpage381
dc.identifier.issn1842-6573
dc.identifier.issue5-6
dc.identifier.scopus2-s2.0-84905587710
dc.identifier.scopusqualityQ4
dc.identifier.startpage378
dc.identifier.urihttps://hdl.handle.net/20.500.14669/1694
dc.identifier.volume8
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherNational Institute of Optoelectronics
dc.relation.ispartofOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subject2DEG
dc.subjectAlGaAs
dc.subjectElectron temperature
dc.subjectGaAs
dc.titleDetermination of non-equilibrium electron energy and momentum relaxation rates in GaAs/AlGaAs multiple quantum well
dc.typeArticle

Dosyalar

Koleksiyon

Scopus İndeksli Yayınlar Koleksiyonu