Determination of non-equilibrium electron energy and momentum relaxation rates in GaAs/AlGaAs multiple quantum well
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Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
National Institute of Optoelectronics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The results of the experimental techniques used in the determination of the power and momentum losses from a 2DEG were presented. These are the hot electron photoluminescence (HEPL), and mobility mapping techniques which involve the measurements of PL in synchronization with applied voltage pulse, high field I-V and Hall mobility. In the presence of electric field the carriers are heated, and the high energy-tail of the PL, which is described by Maxwell-Boltzmann distribution, can be used to obtain the temperature of the non-equilibrium carriers. The second technique called mobility mapping is used to verify the temperature of the non-equilibrium carriers.
Açıklama
Anahtar Kelimeler
2DEG, AlGaAs, Electron temperature, GaAs
Kaynak
Optoelectronics and Advanced Materials, Rapid Communications
WoS Q Değeri
Scopus Q Değeri
Q4
Cilt
8
Sayı
5-6
