Study of the electronic properties of Cu2O thin films by X-ray absorption spectroscopy

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dc.authoridGumus, Cebrail/0000-0003-1629-2338
dc.authoridOzaslan, Dogan/0000-0001-5947-4663
dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.contributor.authorOzaslan, D.
dc.contributor.authorOzkendir, O. M.
dc.contributor.authorGunes, M.
dc.contributor.authorUfuktepe, Y.
dc.contributor.authorGumus, C.
dc.date.accessioned2025-01-06T17:37:17Z
dc.date.available2025-01-06T17:37:17Z
dc.date.issued2018
dc.description.abstractWe have investigated the thickness effect of Cu2O thin films on the electronic structure deposited by the successive ionic layer adsorption and reaction (SILAR) method. Crystal, optical and electronic properties of the Cu2O thin films were studied by X-ray diffraction (XRD) and X-ray absorption near edge spectroscopy (XANES). According to the crystal structure analysis, films were determined to be mainly in cubic Cu2O structures. The XANES study have shown that Cu L-2,L-3 absorption edges are influenced by the chemical state of the Cu atoms strongly and a sole ionic picture is not enough to describe the L-edge spectra of Cu2O. It has been observed that Cu L-2,L-3-edge spectra of the samples present typical electronic features of both monovalent Cu (I) and Cu (II) divalent states. The grains have an average size of 2.5 nm and XRD measurements revealed that (111) plane is the preferential orientation. Optical studies have shown that the optical absorption edge shifted to higher energies as the film thickness increases. It was found that the optical band gap was significantly influenced by the film thickness. Our results exhibited that the increment of the optical band gap of Cu2O thin films associated with a significant decrease of Cu-Cu interaction as a result of the increase in the film thickness. (C) 2017 Elsevier GmbH. All rights reserved.
dc.description.sponsorshipCukurova University [FDK-2015-3778]
dc.description.sponsorshipThis work was supported by Cukurova University under FDK-2015-3778 project number. The authors are thankful to Dr. Gunnar Ohrwall from MAX-lab., both for their technical support and great hospitality.
dc.identifier.doi10.1016/j.ijleo.2017.12.119
dc.identifier.endpage1330
dc.identifier.issn0030-4026
dc.identifier.issn1618-1336
dc.identifier.scopus2-s2.0-85042356366
dc.identifier.scopusqualityQ1
dc.identifier.startpage1325
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2017.12.119
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2184
dc.identifier.volume157
dc.identifier.wosWOS:000424186500161
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Gmbh
dc.relation.ispartofOptik
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectCu2O
dc.subjectXANES
dc.subjectXRD
dc.subjectSILAR
dc.subjectThin film
dc.titleStudy of the electronic properties of Cu2O thin films by X-ray absorption spectroscopy
dc.typeArticle

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