Determination of electronic band structure of quaternary ferromagnetic Ga0.97-yMn0.03CryAs epitaxial layers

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dc.authoridErol, Ayse/0000-0003-4196-1791
dc.authoridHenini, Mohamed/0000-0001-9414-8492
dc.authoridDonmez, Omer/0000-0002-7635-3991
dc.contributor.authorDonmez, Omer
dc.contributor.authorGunes, Mustafa
dc.contributor.authorHenini, Mohamed
dc.contributor.authorErol, Ayse
dc.date.accessioned2025-01-06T17:43:32Z
dc.date.available2025-01-06T17:43:32Z
dc.date.issued2023
dc.description.abstractIntroducing transition metals to conventional III-V semiconductors anomalously changes their fundamental characteristics, such as electronic, magnetic, and structural properties. In this study, we show that the valence band anti-crossing (VBAC) model can be exploited to calculate the electronic band structure of the quaternary Ga0.97-xMn0.03CrxAs epitaxial layers. In this model, the localized Mn and Cr defect states interact with the valence band states (VB), reconstructing VBs and splitting each VB state. The splitting top of the VB state forms an impurity band (IB) and fundamental VB edge. Photomodulated reflectance (PR) spectroscopy is exploited to determine optical transition energies at room temperature. PR spectra were analyzed with the third derivative functional form (TDFF) signal's line shape. The experimental optical transition energies, including band-to-band and spin split-off band transitions, match the calculated optical transition energies by the VBAC model. In the calculation, the interaction energy between localized Mn/Cr-energy level and valence band edges is experi-mentally determined as 0.7 eV.
dc.description.sponsorshipScientific Research Projects Coor-dination Unit of Istanbul University [FDP-2020-36589, FBG-2022-38573]; [FDK-2019-35447]
dc.description.sponsorshipThis study was supported by the Scientific Research Projects Coor-dination Unit of Istanbul University (Project No: FDK-2019-35447, FDP-2020-36589, and FBG-2022-38573) . We acknowledge Prof Hiroyuki AKINAGA for supplying the samples.
dc.identifier.doi10.1016/j.physb.2023.415074
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85162761540
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2023.415074
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2695
dc.identifier.volume665
dc.identifier.wosWOS:001054973800001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectMagnetic semiconductor
dc.subjectBand anti-crossing model
dc.subjectGaMnCrAs
dc.subjectPhotoreflectance
dc.titleDetermination of electronic band structure of quaternary ferromagnetic Ga0.97-yMn0.03CryAs epitaxial layers
dc.typeArticle

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