Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE

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dc.authoridAYDIN, MUSTAFA/0000-0002-1002-6007
dc.authoridDonmez, Omer/0000-0002-7635-3991
dc.contributor.authorGunes, M.
dc.contributor.authorAydin, M.
dc.contributor.authorDonmez, O.
dc.contributor.authorGumus, C.
dc.contributor.authorErol, A.
dc.contributor.authorMarroquin, J. F. R.
dc.contributor.authorFelix, J. F.
dc.date.accessioned2025-01-06T17:43:19Z
dc.date.available2025-01-06T17:43:19Z
dc.date.issued2024
dc.description.abstractTemperature-dependent carrier transport properties of two InSb epilayers grown on GaAs substrates by Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) are investigated. The InSb epilayer grown by MBE was undoped, but the undoped InSb epilayer grown by MOCVD was grown on a thin Zndoped InSb layer. Hall Effect results showed that the Hall coefficients (RH) for InSb grown by MBE and MOCVD are negative in temperature ranges 4.2 K-300 K and 200 K-300 K, respectively. However, for the InSb sample grown by MOCVD, RH switches from a positive to a negative value for temperatures above similar to 180 K, which could be due to the capture electrons generated from dislocation between InSb and GaAs by Zn atoms. The electron mobilities of InSb grown by MBE and MOCVD were 38,247 and 51,704 cm(2)/Vs, respectively. Low-temperature magnetoresistance measurements showed clear Shubnikov-de-Haas oscillations (SdH) in MBE InSb; however, no SdH oscillations were observed in MOCVD InSb samples.
dc.description.sponsorshipScientific Research Projects Coor- dination Unit of Istanbul University [FBG-2022-38573]
dc.description.sponsorshipThis study was supported by the Scientific Research Projects Coor- dination Unit of Istanbul University (Project No: FBG-2022-38573) .
dc.identifier.doi10.1016/j.mseb.2024.117424
dc.identifier.issn0921-5107
dc.identifier.issn1873-4944
dc.identifier.scopus2-s2.0-85193204427
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2024.117424
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2616
dc.identifier.volume305
dc.identifier.wosWOS:001243565200001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMaterials Science and Engineering B-Advanced Functional Solid-State Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectInSb
dc.subjectHall Effect
dc.subjectMagnetoresistance
dc.subjectAnomalous carrier transport
dc.subjectShubnikov-de Haas
dc.titleEffect of doping on transport properties of InSb epilayers grown by MOCVD and MBE
dc.typeArticle

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