CdSe thin films-based photodetector doped with Cu, In and Ga atoms: a comparative work

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dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.contributor.authorYilmaz, S.
dc.contributor.authorPolat, I.
dc.contributor.authorTomakin, M.
dc.contributor.authorKucukomeroglu, T.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:36:56Z
dc.date.available2025-01-06T17:36:56Z
dc.date.issued2023
dc.description.abstractThe present work demonstrates a comparison of performance of Cu, In and Ga-doped CdSe thin films-based photodetectors. Structural, morphological, optical and electrical investigation of Cu, In and Ga-doped CdSe thin films prepared by close space sublimation on glass slides is also achieved. It is obtained that Cu, In and Ga-doped CdSe thin films have a good crystal quality with a hexagonal structure in the preferred orientation along (002) plane. Morphological examination shows that Cu-doped CdSe thin films grow in the porous microstructure while In and Ga-doped CdSe films possess compact and uniform morphology without any voids. Transparency of In and Ga-doped CdSe films are higher than that of Cu-doped CdSe throughout the entire spectrum. Band gap values of all the samples are determined to be almost 1.72 eV. Photoluminescence data indicate that Ga-doped CdSe thin films display a deep level band at the lowest peak intensity, which is the indication of less defected structure. All the samples exhibit n-type conductivity. Additionally, the maximum carrier density and the minimum resistivity are reached for In-doped CdSe thin films as 1.75 x 10(16) cm(-3) and 6.12 & omega; cm, respectively. Rise time of 28 ms and fall time of 25 ms are obtained for Cu-doped CdSe thin films-based photodetector, which are the fastest photoresponse within all the devices. Furthermore, Cu-doped CdSe thin films-based device has a responsivity of 1.20 x 10(-2) A/W and a detectivity of 1.20 x 10(9) Jones that makes Cu-doped CdSe thin films-based device as a strong candidate for high sensitive photodetector applications.
dc.identifier.doi10.1007/s00339-023-06860-2
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue8
dc.identifier.scopus2-s2.0-85165692059
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-023-06860-2
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2041
dc.identifier.volume129
dc.identifier.wosWOS:001034612400003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectCdSe thin films
dc.subjectClose space sublimation
dc.subjectCu
dc.subjectIn and Ga-doping
dc.subjectPhotodetector
dc.titleCdSe thin films-based photodetector doped with Cu, In and Ga atoms: a comparative work
dc.typeArticle

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