The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure

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dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridGaleti, Helder/0000-0002-5217-8367
dc.authoridDonmez, Omer/0000-0002-7635-3991
dc.authoridAlghamdi, Haifaa/0000-0003-2456-0419
dc.authoridalotaibi, Saud/0009-0003-5562-5577
dc.contributor.authorGunes, M.
dc.contributor.authorDonmez, O.
dc.contributor.authorGumus, C.
dc.contributor.authorErol, A.
dc.contributor.authorAlghamdi, H.
dc.contributor.authorAlhassan, S.
dc.contributor.authorAlhassni, A.
dc.date.accessioned2025-01-06T17:36:41Z
dc.date.available2025-01-06T17:36:41Z
dc.date.issued2021
dc.description.abstractThe band line-up and band offset calculations of GaAs0.978Bi0.022/GaAs single quantum well with spatial changes of Bi composition were reported. The spatial Bi profile and a certain amount of the Bi composition in the barrier layer were determined by HR-XRD measurements. Virtual Crystal Approximation and Valence Band Anti-Crossing models were used including strain effects to obtain conduction and valence band edge shifts with Bi incorporation. Photoluminescence (PL) measurements were performed at a low temperature of 8 K as a function of excitation intensity. The PL spectra have shown asymmetric line shapes, which were fitted with different Gaussian functions. Comparing experimental PL results with calculated band edge energies, it was found that optical transition is a type I under low intensity excitation while the optical transition is switched from type I to type II due to the spatial changes in Bi concentrations. The band offsets Delta E-c/Delta E-v were also determined.
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK) [115F63]; Scientific Research Projects Coordination Unit of Istanbul University [ONAP-52321]; FAPESP [19/0742-5]
dc.description.sponsorshipThis work was supported by the Scientific and Technical Research Council of Turkey (TUBITAK) under Grant No. 115F63 and by the Scientific Research Projects Coordination Unit of Istanbul University (ONAP-52321). HVA Galeti acknowledges the financial support from FAPESP 19/0742-5). We acknowledge J. Puustinen and J. Hilska from the Optoelectronics Research Centre, Tampere University, for fabricating the epitaxial samples.
dc.identifier.doi10.1016/j.physb.2020.412487
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85097222260
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2020.412487
dc.identifier.urihttps://hdl.handle.net/20.500.14669/1957
dc.identifier.volume602
dc.identifier.wosWOS:000607519200002
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectBismide quantum well
dc.subjectValence band anticrossing model
dc.subjectBand offset
dc.subjectIndirect transition
dc.titleThe effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure
dc.typeArticle

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