An evaluation of structural, optical and electrical characteristics of Ag/ZnO rods/SnO2/In-Ga Schottky diode

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dc.authoridKUCUKOMEROGLU, TAYFUR/0000-0003-4121-9343
dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.contributor.authorKucukomeroglu, T.
dc.contributor.authorYilmaz, S.
dc.contributor.authorPolat, I.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:44:53Z
dc.date.available2025-01-06T17:44:53Z
dc.date.issued2018
dc.description.abstractZnO rods were successfully deposited on ZnO seeded SnO2 coated glass substrates by a spray pyrolysis route. It was seen that the grown ZnO sample had a wurtzite structure with a well-defined hexagons of similar to 1-3 A mu m in diameter. Photoluminescence results measured at 300 K indicated that ZnO rods had a ultra-violet peak located at 383 nm without a deep level band emission. ZnO rods were subsequently used to realize a Ag/ZnO rods/SnO2/In-Ga Schottky diode which displayed rectifying current-voltage (I-V) characteristic with a turn on voltage of 1.2 V at 300 K. Electrical parameters of the Ag/ZnO rods/SnO2/In-Ga Schottky diode were further examined by (I-V) characteristics at the temperature range of 125-300 K with a step of 25 K. Using thermionic emission theory (TET), it was found that the ideality factor reduced with the increase of temperature whereas the zero bias barrier height increased with the increment of the temperature. Using ln(I (0) )/T (2) versus q/nkT plot, Richardson constant (A*) and zero bias barrier height (I broken vertical bar (B0)) was obtained as 3.27 x 10(-5) A m(-2) K-2 and 0.32 eV, respectively. After applying TET with the assumption of Gaussian distribution, a mean barrier height and the modified Richardson constant (A**) were determined to be 0.88 eV and 2.75 x 10(5) A m(-2) K-2.
dc.identifier.doi10.1007/s10854-018-9049-5
dc.identifier.endpage10060
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue12
dc.identifier.scopus2-s2.0-85045673065
dc.identifier.scopusqualityQ2
dc.identifier.startpage10054
dc.identifier.urihttps://doi.org/10.1007/s10854-018-9049-5
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3226
dc.identifier.volume29
dc.identifier.wosWOS:000433031400036
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectBarrıer Dıodes
dc.subjectZno
dc.subjectGrowth
dc.subjectTemperature
dc.subjectNanorods
dc.subjectFabrıcatıon
dc.subjectNanowıres
dc.subjectContacts
dc.subjectDrıven
dc.titleAn evaluation of structural, optical and electrical characteristics of Ag/ZnO rods/SnO2/In-Ga Schottky diode
dc.typeArticle

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