The effects of annealing temperature on the thickness, morphology, band gap energy, and photocatalytic performance of ZIF-8-derived ZnO/TiO2 thin films
[ X ]
Tarih
2024
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Multi-oxide photocatalytic materials derived from metal organic frameworks (MOFs) are attracting widespread attention in recent years. The heterostructure originating from oxide-oxide junctions and nonmetal doping due to the combustion of organics from MOFs provide desirable properties to the photocatalytic material. In this study, the effects of annealing temperature on the material properties and photocatalytic activity of ZIF-8-derived ZnO/TiO2 thin films were investigated. XRD, XPS, and FTIR analyses confirmed the oxidation of ZIF-8 to ZnO and SEM analysis revealed the formation of a porous structure at the annealing temperature of 500 degrees C. UV-Vis analysis indicated that the band gap energy decreased from 3.23 to 2.04 eV with increasing annealing temperature. Photocatalytic methylene blue degradation experiments showed that the thin film annealed at 500 degrees C had higher activity than the films annealed at lower temperatures. The thin film annealed at 500 degrees C had more than two times the dye degradation efficiency of the film annealed at 400 degrees C (72% and 33%, respectively). This film was also active in the photocatalytic degradation of caffeic acid which is a colorless pollutant. The high photocatalytic activity of the thin film annealed at higher temperature was attributed to its narrower band gap energy, higher porosity, and more efficient electron-hole separation, which are due to the presence of heterostructure, nonmetal doping, and deficient zones formed by the oxidation of imidazole rings.
Açıklama
Anahtar Kelimeler
Zıf-8, Composıte, Tıo2-At-Zıf-8, Nanopartıcles, Degradatıon, Fabrıcatıon, Co2
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
35
Sayı
18