The effect of annealing temperature on the physical properties of Cu2O thin film deposited by SILAR method

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dc.authoridERKEN, Ozge/0000-0002-6493-3059
dc.authoridOzaslan, Dogan/0000-0001-5947-4663
dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.contributor.authorOzaslan, D.
dc.contributor.authorErken, O.
dc.contributor.authorGunes, M.
dc.contributor.authorGumus, C.
dc.date.accessioned2025-01-06T17:37:17Z
dc.date.available2025-01-06T17:37:17Z
dc.date.issued2020
dc.description.abstractCu2O film was deposited on a glass substrate at 70 degrees C by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The Cu2O film was annealed in an air atmosphere at 100 degrees C, 300 degrees C, and 500 degrees C temperatures for 1 h and the effect of the annealing temperature on the physical properties was investigated. The phase-transition temperature that corresponds to the transformation from Cu2O to CuO was occurred at temperature of approximately 300 degrees C with annealing process. The energy band gap (E-g) was reduced from 2.57 eV to 1.91 eV with the increasing annealing temperature. Hall measurement revealed that the film showed p-type conductivity and the resistivity (rho) of Cu2O deposited at 70 degrees C and annealed 100 degrees C were calculated as 6.12 x 10(4) and 7.44 x 10(3 )Omega cm, respectively, while the film annealed at 300 degrees C and 500 degrees C the resistivity of CuO was found to be 8.23 x 10(3) and 5.11 x 10(2) Omega em, respectively.
dc.description.sponsorshipCukurova University [FDK-2015-3778]
dc.description.sponsorshipThis work was supported by Cukurova University under project number FDK-2015-3778.
dc.identifier.doi10.1016/j.physb.2019.411922
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85076710148
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2019.411922
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2183
dc.identifier.volume580
dc.identifier.wosWOS:000510641000029
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectCu2O
dc.subjectAnnealing
dc.subjectCuO
dc.subjectSILAR
dc.subjectXRD
dc.subjectFE-SEM
dc.titleThe effect of annealing temperature on the physical properties of Cu2O thin film deposited by SILAR method
dc.typeArticle

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