Electronic transport in strained p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well

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dc.authoridGumus, Cebrail/0000-0003-1629-2338
dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.contributor.authorGunes, Mustafa
dc.contributor.authorGumus, Cebrail
dc.date.accessioned2025-01-06T17:38:05Z
dc.date.available2025-01-06T17:38:05Z
dc.date.issued2014
dc.description.abstractWe report on the electronic transport properties of p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well. The experiments included the spectral photoluminescence between 8 and 300 K, and Hall effect measurements at temperatures between 14 and 300 K. The effect of strain which induces splitting of the valence band as light and heavy hole bands on transport is discussed. The calculated band alignment of the GaInAs sample using model-solid theory including strain effects indicates large conduction band discontinuities and a much smaller valance band discontinuity in GaInAs. The effect of the conduction and valance band discontinuity on the electronic transport properties is also discussed.
dc.identifier.doi10.1080/14786435.2014.934314
dc.identifier.endpage2811
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue24
dc.identifier.scopus2-s2.0-84905395112
dc.identifier.scopusqualityQ3
dc.identifier.startpage2804
dc.identifier.urihttps://doi.org/10.1080/14786435.2014.934314
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2472
dc.identifier.volume94
dc.identifier.wosWOS:000340281300006
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofPhilosophical Magazine
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectGaInAs
dc.subjectelectronic transport
dc.subjectmodulation doped
dc.subjectphotoluminescence
dc.subjectHall effect
dc.titleElectronic transport in strained p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well
dc.typeArticle

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