A research on growth and characterization of CdS:Eu thin films

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dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.authoridPOLAT, ISMAIL/0000-0002-5134-0246
dc.contributor.authorYilmaz, S.
dc.contributor.authorPolat, I.
dc.contributor.authorTomakin, M.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:45:06Z
dc.date.available2025-01-06T17:45:06Z
dc.date.issued2019
dc.description.abstractChemical spray pyrolysis-grown CdS thin films including various quantities of Eu atoms (from 0 to 10at.%) were synthesized on glass slides. The detailed physical properties of the produced CdS and CdS:Eu thin films were explored. Structural analysis showed that Eu-doping enhanced the crystal quality of CdS thin films until 10at.% Eu-doping and further Eu-doping treatment led to a distortion in the CdS structure. In addition, the crystallite sizes of CdS thin films dropped from 36.2 to 32.4nm as Eu-doping level increased to 10at.%. Morphological data showed that increasing Eu-doping remarkably varied the surface morphology of CdS thin films forming smaller grains. Chemical content examinations approved the presence of Eu atoms in CdS structure. From the optical measurements, it was obtained that more transparent CdS thin films with a maximum transmittance of 68% at 820nm were created after 10at.% Eu-doping and bandgap values of samples reduced from 2.58 to 2.47eV with rising of Eu-doping from 0 to 10at.%. Room temperature photoluminescence data demonstrated the formation of two essential peaks for all the samples, which are in turn related to green and yellow bands. Electrical investigation pointed out that Eu-doping enhanced the carrier density of CdS thin films from 4.38 x 10(13) cm(-3) to 2.46 x 10(14) cm(-3) and dropped the resistivity of CdS samples from 2.59 x 10(4) cm to 5.85 x 10(3) cm until 6at.% and further increment of Eu-doping paved the way to get worse electrical data. Thus, it can be brought a conclusion that Eu-doping not only improved the optical properties of CdS thin films, but also restored the electrical properties, which are able to use in the opto-electronic devices.
dc.description.sponsorshipAdana Science and Technology University [17103029]
dc.description.sponsorshipThe work has been financially supported by the research fund of Adana Science and Technology University by a Project Number of 17103029.
dc.identifier.doi10.1007/s00339-018-2369-8
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85059613085
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-018-2369-8
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3311
dc.identifier.volume125
dc.identifier.wosWOS:000454877700007
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectRoom-Temperature Ferromagnetısm
dc.subjectDoped Zno
dc.subjectOptıcal-Propertıes
dc.subjectSolar-Cell
dc.subjectPhysıcal-Propertıes
dc.subjectPhotolumınescence Propertıes
dc.subjectEu
dc.subjectNanopartıcles
dc.subjectCo
dc.subjectNanocrystals
dc.titleA research on growth and characterization of CdS:Eu thin films
dc.typeArticle

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