Optical and electrical optimization of dysprosium-doped CdS thin films

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dc.authoridPOLAT, ISMAIL/0000-0002-5134-0246
dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.authoridKUCUKOMEROGLU, TAYFUR/0000-0003-4121-9343
dc.authoridToreli, Saltuk Bugra/0000-0001-9592-6540
dc.contributor.authorYilmaz, S.
dc.contributor.authorPolat, I.
dc.contributor.authorTomakin, M.
dc.contributor.authorToreli, S. B.
dc.contributor.authorKucukomeroglu, T.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:45:06Z
dc.date.available2025-01-06T17:45:06Z
dc.date.issued2018
dc.description.abstractAs-grown and Dy-doped CdS thin films containing concentrations of 1, 2, 3, 4 and 5 at.% Dy atom were prepared via chemical spray route on glass substrates. The constructed thin films were searched through analyzing their structural, morphological, optical and electrical features. X-ray diffraction (XRD) surveys showed that as-grown and Dy-doped CdS thin films had hexagonal structure and the preferential orientation was along (101) plane for as-grown, 1 and 2 at.% Dy-dopings. But further dopings (3 and 4 at.%) caused more random orientation, especially for the case of 5 at.%, the preferred orientation changed to (002) plane. The crystallite size progressively lessened from 39 to 27 nm with increasing Dy-doping. The existence of a close relation between grain shape and the preferential orientation appeared as compared to micrographs of scanning electron microscopy with XRD data. 5 at.% Dy-doped CdS thin films possessed the best transmittance (over 80%) among all the samples. Except for 2 at.% Dy-doped CdS sample, the other samples had almost a band gap of 2.45 eV. Photoluminescence results revealed that more stoichiometric thin films were formed after Dy-incorporations. The outcomes of the electrical investigation evidenced that the best sample was 1 at.% Dy-doped CdS thin films since the lowest resistivity (6.35 x 10(3) abroken vertical bar cm) and highest carrier concentration (1.06 x 10(14) cm(-3)) were obtained for this specimen.
dc.identifier.doi10.1007/s10854-018-9613-z
dc.identifier.endpage14782
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue17
dc.identifier.scopus2-s2.0-85049582089
dc.identifier.scopusqualityQ2
dc.identifier.startpage14774
dc.identifier.urihttps://doi.org/10.1007/s10854-018-9613-z
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3303
dc.identifier.volume29
dc.identifier.wosWOS:000441296500045
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectPulsed-Laser Deposıtıon
dc.subjectZno Nanopartıcles
dc.subjectSpray-Pyrolysıs
dc.subjectChemıcal Bath
dc.subjectPhotolumınescence
dc.subjectNanostructures
dc.titleOptical and electrical optimization of dysprosium-doped CdS thin films
dc.typeArticle

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