An all-ZnO microbolometer for infrared imaging

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dc.authoridKesim, Yunus Emre/0009-0000-7291-7350
dc.authoridTANRIKULU, M. Yusuf/0000-0001-7956-1289
dc.contributor.authorKesim, Yunus Emre
dc.contributor.authorBattal, Enes
dc.contributor.authorTanrikulu, M. Yusuf
dc.contributor.authorOkyay, Ali K.
dc.date.accessioned2025-01-06T17:44:42Z
dc.date.available2025-01-06T17:44:42Z
dc.date.issued2014
dc.description.abstractMicrobolometers are extensively used for uncooled infrared imaging applications. These imaging units generally employ vanadium oxide or amorphous silicon as the active layer and silicon nitride as the absorber layer. However, using different materials for active and absorber layers increases the fabrication and integration complexity of the pixel structure. In order to reduce fabrication steps and therefore increase the yield and reduce the cost of the imaging arrays, a single layer can be employed both as the absorber and the active material. In this paper, we propose an all-ZnO microbolometer, where atomic layer deposition grown zinc oxide is employed both as the absorber and the active material. Optical constants of ZnO are measured and fed into finite-difference-time-domain simulations where absorption performances of microbolometers with different gap size and ZnO film thicknesses are extracted. Using the results of these optical simulations, thermal simulations are conducted using finite-element-method in order to extract the noise equivalent temperature difference (NETD) and thermal time constant values of several bolometer structures with different gap sizes, arm and film thicknesses. It is shown that the maximum performance of 171 mK can be achieved with a body thickness of 1.1 mu m and arm thickness of 50 nm, while the fastest response with a time constant of 0.32 ms can be achieved with a ZnO thickness of 150 nm both in arms and body. (C) 2014 Elsevier B.V. All rights reserved.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [112M004, 112E052, 113M815, 113M912]; TUBITAK-BIDEB
dc.description.sponsorshipThis work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK), Grant Numbers 112M004, 112E052, 113M815 and 113M912. Y.E.K. and E.B. acknowledge TUBITAK-BIDEB for national M.Sc. fellowship. The authors certify that there is no conflict of interest with any financial organization regarding the material discussed.
dc.identifier.doi10.1016/j.infrared.2014.07.023
dc.identifier.endpage249
dc.identifier.issn1350-4495
dc.identifier.issn1879-0275
dc.identifier.scopus2-s2.0-84907336308
dc.identifier.scopusqualityQ2
dc.identifier.startpage245
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2014.07.023
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3162
dc.identifier.volume67
dc.identifier.wosWOS:000346549700036
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofInfrared Physics & Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectUncooled infrared imaging
dc.subjectMicrobolometers
dc.subjectZinc oxide
dc.subjectAtomic layer deposition
dc.subjectTransparent conductive oxides
dc.titleAn all-ZnO microbolometer for infrared imaging
dc.typeArticle

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