Realization of Single Layer Microbolometer Detector Pixel Using ZnO Material

dc.authoridTANRIKULU, M. Yusuf/0000-0001-7956-1289
dc.authoridOkyay, Ali Kemal/0000-0002-4956-5307
dc.contributor.authorTanrikulu, M. Yusuf
dc.contributor.authorYildizak, Cigdem
dc.contributor.authorOkyay, Ali K.
dc.contributor.authorAkar, Orhan
dc.contributor.authorSarac, Adem
dc.contributor.authorAkin, Tayfun
dc.date.accessioned2025-01-06T17:44:51Z
dc.date.available2025-01-06T17:44:51Z
dc.date.issued2020
dc.description.abstractThis paper presents the realization of a single layer microbolometer pixel fabricated using only ZnO material coated with atomic layer deposition. Due to the stress-free nature and high temperature coefficient of resistance of the ALD coated ZnO material, it can be used both as structural and active layers in microbolometer detectors. The design, simulations, and the fabrication optimization of two types of single layer ZnO microbolometer having pixel pitch of 35 mu m are shown in this study. The designed pixels have thermal conductances of 58 nW/K and 476 nW/K while their thermal time constant values are 1.62 ms and 0.24 ms. The temperature coefficient of resistance and 1/f corner frequency of fabricated resistors are measured to be -10 %/K and 302.5 Hz respectively. The absorption coefficients of both pixels are measured to be around 40 % in 8-12 mu m wavelength range. The fabricated pixels are the first examples of successfully obtained single layer ZnO microbolometer pixels in literature and the proposed structures can be used to decrease the design complexities and fabrication costs and increase the yield of the detectors making them possible to be used in low-cost applications.
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [114E645]; Scientific Research Project Unit of Adana Alparslan Turkes Science and Technology University [16103011]
dc.description.sponsorshipThis work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project 114E645 and in part by the Scientific Research Project Unit of Adana Alparslan Turkes Science and Technology University under Project 16103011. An earlier version of this article was presented at the Defense and Security Symposium 2018 in Infrared Technology and Applications XLIV Conference.
dc.identifier.doi10.1109/JSEN.2020.2992991
dc.identifier.endpage9684
dc.identifier.issn1530-437X
dc.identifier.issn1558-1748
dc.identifier.issue17
dc.identifier.scopus2-s2.0-85090129649
dc.identifier.scopusqualityQ1
dc.identifier.startpage9677
dc.identifier.urihttps://doi.org/10.1109/JSEN.2020.2992991
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3212
dc.identifier.volume20
dc.identifier.wosWOS:000557391000008
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.ispartofIeee Sensors Journal
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectZinc oxide
dc.subjectII-VI semiconductor materials
dc.subjectDetectors
dc.subjectFabrication
dc.subjectAbsorption
dc.subjectThermal conductivity
dc.subjectAtomic layer deposition
dc.subjectmicrobolometer
dc.subjectsingle layer
dc.subjectZnO
dc.titleRealization of Single Layer Microbolometer Detector Pixel Using ZnO Material
dc.typeArticle

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