Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures

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dc.authoridKaya, Dogan/0000-0002-6313-7501
dc.authoridUngan, Fatih/0000-0003-3533-4150
dc.authoridMaslov, Mikhail/0000-0001-8498-4817
dc.authoridEkicibil, Ahmet/0000-0003-3071-0444
dc.contributor.authorHopoglu, Hicret
dc.contributor.authorKaya, Dogan
dc.contributor.authorMaslov, Mikhail M.
dc.contributor.authorKaya, Savas
dc.contributor.authorDemir, Lkay
dc.contributor.authorAltuntas, Ismail
dc.contributor.authorUngan, Fatih
dc.date.accessioned2025-01-06T17:43:47Z
dc.date.available2025-01-06T17:43:47Z
dc.date.issued2023
dc.description.abstractIn this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar gas pressure and thickness. X-ray diffraction and Rietveld refinement analysis confirmed a cubic crystal structure and showed that the lattice parameters and the d(111)-space increased from 4.0559 & ANGS; to 4.2712 & ANGS; and from 2.3208 & ANGS; to 2.4582 & ANGS;, respectively, due to increased Ar pressure during deposition. Scanning electron microscopy and atomic force microscopy were used to determine the cross-sectional and surface topology of the NiO films, which exhibited uniform and homogeneous growth with an average spherical size of 54.28 & PLUSMN; 0.33 nm. The optical bandgap values of the films were calculated to be between 3.26 and 3.65 eV, increasing with pressure. Hall measurements confirmed the p-type semiconductor nature of the films with an average sheet carrier density of 1010 cm ? 2. The films exhibited soft magnetic properties, with a maximum Hc and Ms of 178.5 Oe and 5.82 emu/ cm3 for 246 nm NiO film, respectively. Density functional theory (DFT) calculations confirmed the experimental results for both single to five layers NiO films and bulk NiO formations. The refined energy gap value was found to be 3.2 eV by the DFT calculation. The films produced at room temperature were found to be stable and reproducible, making them suitable as p-type materials for device construction.
dc.description.sponsorshipScientific Research Project Fund of Sivas Cumhuriyet University; Cukurova University Department of Physics facilities; [F-2021-640]
dc.description.sponsorshipThis work is supported by the Scientific Research Project Fund of Sivas Cumhuriyet University under the project number F-2021-640. The authors acknowledge the usage of the Nanophotonics Research and Application Center at Sivas Cumhuriyet University (CUNAM) , Sivas Cumhuriyet University R & D Center (CUTAM) , Cukurova University Department of Physics facilities.
dc.identifier.doi10.1016/j.physb.2023.414937
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85156230935
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2023.414937
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2802
dc.identifier.volume661
dc.identifier.wosWOS:001053186500001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectNiO
dc.subjectSputtering
dc.subjectOptical
dc.subjectElectronic
dc.subjectMagnetization
dc.subjectDFT
dc.titleInvestigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
dc.typeArticle

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