Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

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dc.contributor.authorAlghamdi, Haifa
dc.contributor.authorGordo, Vanessa Orsi
dc.contributor.authorSchmidbauer, Martin
dc.contributor.authorFelix, Jorlandio F.
dc.contributor.authorAlhassan, Sultan
dc.contributor.authorAlhassni, Amra
dc.contributor.authorPrando, Gabriela Augusta
dc.date.accessioned2025-01-06T17:30:11Z
dc.date.available2025-01-06T17:30:11Z
dc.date.issued2020
dc.description.abstractThe effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1 - xBix/GaAs single quantum wells grown on (001) and (311)B substrates by molecular beam epitaxy was investigated. The structural properties were investigated by high-resolution x-ray diffraction (HR-XRD) and Transmission Electron Microscopy. The Bi concentration profiles were determined by simulating the HR-XRD 2?-? scans using dynamical scattering theory to estimate the Bi content, lattice coherence, and quality of the interfaces. The Bi composition was found to be similar for both samples grown on (001) and (311)B GaAs substrates. However, the simulations indicate that the Bi composition is not only limited in the GaAsBi quantum well (QW) layer but also extends out of the GaAsBi QW toward the GaAs barrier. Photoluminescence (PL) measurements were performed as a function of temperature and laser power for samples with a nominal Bi composition of 3%. PL spectra showed that (001) and (311)B samples have different peak energies at 1.23 eV and 1.26 eV, respectively, at 10 K. After RTA at 300 °C for 2 min, the PL intensity of (311)B and (001) samples was enhanced by factors of ?2.5 and 1.75, respectively. However, for the (001) and (311)B FA samples, an enhancement of the PL intensity by a factor of only 1.5 times could be achieved. The enhancement of PL intensity in annealed samples was interpreted in terms of PL activation energies, with a reduction in the alloy disorder and an increase in the Bi cluster. © 2020 Author(s).
dc.description.sponsorshipTUBITAK, (115F063); Fundação de Amparo à Pesquisa do Estado de São Paulo, FAPESP, (16/10668-7, 18/01808-5, 19/07442-5); Fundação de Amparo à Pesquisa do Estado de São Paulo, FAPESP; Conselho Nacional de Desenvolvimento Científico e Tecnológico, CNPq, (430470/2018-5); Conselho Nacional de Desenvolvimento Científico e Tecnológico, CNPq; Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro, FAPERJ; Fundação de Apoio à Pesquisa do Distrito Federal, FAPDF, (193.001.757/2017); Fundação de Apoio à Pesquisa do Distrito Federal, FAPDF
dc.identifier.doi10.1063/1.5140447
dc.identifier.issn0021-8979
dc.identifier.issue12
dc.identifier.scopus2-s2.0-85082590286
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.5140447
dc.identifier.urihttps://hdl.handle.net/20.500.14669/1506
dc.identifier.volume127
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectActivation energy
dc.subjectCoherent scattering
dc.subjectGallium arsenide
dc.subjectHigh resolution transmission electron microscopy
dc.subjectIII-V semiconductors
dc.subjectLattice theory
dc.subjectMolecular beam epitaxy
dc.subjectOptical properties
dc.subjectQuantum well lasers
dc.subjectRapid thermal annealing
dc.subjectSemiconducting gallium
dc.subjectStructural properties
dc.subjectX ray diffraction
dc.subjectX ray diffraction analysis
dc.subjectConcentration profiles
dc.subjectDynamical scattering
dc.subjectFurnace annealing
dc.subjectHigh-resolution x-ray diffraction
dc.subjectPhotoluminescence measurements
dc.subjectRapid thermal annealing (RTA)
dc.subjectSingle quantum well
dc.subjectStructural and optical properties
dc.subjectSemiconductor quantum wells
dc.titleEffect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE
dc.typeArticle

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