Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE
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Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
American Institute of Physics Inc.
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1 - xBix/GaAs single quantum wells grown on (001) and (311)B substrates by molecular beam epitaxy was investigated. The structural properties were investigated by high-resolution x-ray diffraction (HR-XRD) and Transmission Electron Microscopy. The Bi concentration profiles were determined by simulating the HR-XRD 2?-? scans using dynamical scattering theory to estimate the Bi content, lattice coherence, and quality of the interfaces. The Bi composition was found to be similar for both samples grown on (001) and (311)B GaAs substrates. However, the simulations indicate that the Bi composition is not only limited in the GaAsBi quantum well (QW) layer but also extends out of the GaAsBi QW toward the GaAs barrier. Photoluminescence (PL) measurements were performed as a function of temperature and laser power for samples with a nominal Bi composition of 3%. PL spectra showed that (001) and (311)B samples have different peak energies at 1.23 eV and 1.26 eV, respectively, at 10 K. After RTA at 300 °C for 2 min, the PL intensity of (311)B and (001) samples was enhanced by factors of ?2.5 and 1.75, respectively. However, for the (001) and (311)B FA samples, an enhancement of the PL intensity by a factor of only 1.5 times could be achieved. The enhancement of PL intensity in annealed samples was interpreted in terms of PL activation energies, with a reduction in the alloy disorder and an increase in the Bi cluster. © 2020 Author(s).
Açıklama
Anahtar Kelimeler
Activation energy, Coherent scattering, Gallium arsenide, High resolution transmission electron microscopy, III-V semiconductors, Lattice theory, Molecular beam epitaxy, Optical properties, Quantum well lasers, Rapid thermal annealing, Semiconducting gallium, Structural properties, X ray diffraction, X ray diffraction analysis, Concentration profiles, Dynamical scattering, Furnace annealing, High-resolution x-ray diffraction, Photoluminescence measurements, Rapid thermal annealing (RTA), Single quantum well, Structural and optical properties, Semiconductor quantum wells
Kaynak
Journal of Applied Physics
WoS Q Değeri
Scopus Q Değeri
Q1
Cilt
127
Sayı
12
