Development of photovoltaic and photodetection characteristics in CdS/ P3HT devices through Al-doping

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dc.contributor.authorToreli, S. B.
dc.contributor.authorYilmaz, S.
dc.contributor.authorTomakin, M.
dc.contributor.authorPolat, I
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:36:56Z
dc.date.available2025-01-06T17:36:56Z
dc.date.issued2024
dc.description.abstractCdS thin films were deposited by chemical bath deposition onto FTO substrates with Al concentrations of 0, 1, 3, 5 and 6 %. X-ray diffraction revealed introduction of 1 % Al-doping reduced dislocation density and enhanced the crystal quality of CdS. Scanning electron microscopy confirmed a reduction in grain size in Al-doped CdS films compared to CdS. N3 and P3HT layers were spin-coated onto the prepared substrates, respectively. The fabrication of the solar cells was completed using Ag silver paste for the top contact. The lowest photoluminescence peak intensity was achieved for CdS (3 %Al):P3HT solar cell, indicating efficient exciton dissociation. 3 % Al-doped CdS-based device exhibited the highest efficiency at 0.210 %, nearly seven times that of reference device. CdS (3 %Al):P3HT device demonstrated the best photodetection characteristics, with a responsivity of 2.2 x 10-2-2 A/W, detectivity of 3.3 x 108 8 Jones, response time of 13 ms, and recovery time of 12 ms at zero bias voltage.
dc.description.sponsorshipScientific Research Projects Coordination Unit in Adana Alparslan Turkes Science and Technology University [22103007]
dc.description.sponsorshipWe are grateful for the support provided by Scientific Research Projects Coordination Unit in Adana Alparslan Turkes Science and Technology University with a grand number of 22103007.
dc.identifier.doi10.1016/j.mseb.2024.117642
dc.identifier.issn0921-5107
dc.identifier.issn1873-4944
dc.identifier.scopus2-s2.0-85200968535
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2024.117642
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2032
dc.identifier.volume309
dc.identifier.wosWOS:001296251900001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMaterials Science and Engineering B-Advanced Functional Solid-State Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectCdS thin films
dc.subjectAl-doping
dc.subjectCBD
dc.subjectHybrid photovoltaic cell
dc.subjectSelf-driven photodetector
dc.titleDevelopment of photovoltaic and photodetection characteristics in CdS/ P3HT devices through Al-doping
dc.typeArticle

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