Enhancement in the optical and electrical properties of CdS thin films through Ga and K co-doping

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dc.authoridPOLAT, ISMAIL/0000-0002-5134-0246
dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.authoridToreli, Saltuk Bugra/0000-0001-9592-6540
dc.authoridOLGAR, MEHMET ALI/0000-0002-6359-8316
dc.contributor.authorYilmaz, S.
dc.contributor.authorToreli, S. B.
dc.contributor.authorPolat, I.
dc.contributor.authorOlgar, M. A.
dc.contributor.authorTomakin, M.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:36:56Z
dc.date.available2025-01-06T17:36:56Z
dc.date.issued2017
dc.description.abstractIn the presented work, Ga-doped CdS and (Ga-K)-co-doped CdS thin films are grown on glass substrates at a temperature of 400 degrees C through spray pyrolysis. Influence of K-doping on structural, morphological, optical and electrical characteristics of CdS:Ga thin films are examined. K level is changed from 1 at% to 5 at% for CdS:Ga samples just as Ga concentration is fixed 2 at% for all CdS thin films. It is observed from the X-ray diffraction data that all the samples exhibit hexagonal structure and an increase level of K in Ga-doped CdS samples causes a degradation in the crystal quality. Energy-dispersive X-ray spectroscopy measurements illustrate that the best stoichiometric film is acquired when K content is 2 at% in Ga-doped CdS films. Optical transmission curves demonstrate that CdS:Ga thin films exhibit the best optical transparency in the visible range for 4 at% K content compared to other specimens. A widening in the optical bandgap is unveiled after K-dopings. It is obtained that maximum band gap value is found as 2.45 eV for 3 at%, 4 at% and 5 at%. K -dopings while Ga-doped CdS thin films display the band gap value of 2.43 eV. From photoluminescence measurements, the most intensified peak is observed in the deep level emission after incorporation of the 4 at% K atoms. As for electrical characterization results, the resistivity reduces and the carrier density improves with the increase of K concentration from 1 at% to 4 at%. Based on all the data, it can be deduced that 4 at% K-doped CdS:Ga thin films show the best optical and electrical behavior, which can be utilized for solar cell devices.
dc.description.sponsorshipAdana Science and Technology University [MUHDBF.MLZM.2015-16]
dc.description.sponsorshipAll the authors are thankful to Adana Science and Technology University for its financial support under the project number of MUHDBF.MLZM.2015-16.
dc.identifier.doi10.1016/j.mssp.2016.12.016
dc.identifier.endpage52
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85007552211
dc.identifier.scopusqualityQ1
dc.identifier.startpage45
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2016.12.016
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2039
dc.identifier.volume60
dc.identifier.wosWOS:000393258500007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectCdS
dc.subject(Ga-K) co-doping
dc.subjectOptical properties
dc.subjectElectrical properties
dc.titleEnhancement in the optical and electrical properties of CdS thin films through Ga and K co-doping
dc.typeArticle

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