Structural and optical properties of diluted magnetic Ga1-xMnxAs-AlAs quantum wells grown on high-index GaAs planes

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dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridGumus, Cebrail/0000-0003-1629-2338
dc.contributor.authorGunes, Mustafa
dc.contributor.authorGumus, Cebrail
dc.contributor.authorGobato, Yara Galvao
dc.contributor.authorHenini, Mohamed
dc.date.accessioned2025-04-09T09:20:57Z
dc.date.available2025-04-09T09:20:57Z
dc.date.issued2017
dc.description.abstractWe report on the structural and optical properties of Ga1-xMnxAs-AlAs quantum wells (QWs) with x = 0.1% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and (411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used to investigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributed on the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregation was observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mn segregation. XRD measurements were used to determine 2 theta, d and cell parameters.
dc.description.sponsorshipAdana Science and Technology University [MUHDBF.MLZM.2014-13]; Scientific and Technology Research Council of Turkey (TUBITAK) [114F294]; Brazilian Agencies FAPESP [2012/24055-6]
dc.description.sponsorshipThis work was supported by Adana Science and Technology University [Project Number MUHDBF.MLZM.2014-13] and The Scientific and Technology Research Council of Turkey (TUBITAK) [Project Number 114F294]. We also acknowledge Brazilian Agencies FAPESP Grant 2012/24055-6 for financial support.
dc.identifier.doi10.1007/s12034-017-1487-9
dc.identifier.endpage1359
dc.identifier.issn0250-4707
dc.identifier.issn0973-7669
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85039781904
dc.identifier.scopusqualityQ2
dc.identifier.startpage1355
dc.identifier.urihttps://doi.org/10.1007/s12034-017-1487-9
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3467
dc.identifier.volume40
dc.identifier.wosWOS:000418389300008
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIndian Acad Sciences
dc.relation.ispartofBulletin of Materials Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectAFM
dc.subjectMBE
dc.subjectphotoluminescence
dc.subjectXRD
dc.subjectquantum well
dc.subjectGaMnAs
dc.titleStructural and optical properties of diluted magnetic Ga1-xMnxAs-AlAs quantum wells grown on high-index GaAs planes
dc.typeArticle

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