Analysis of mixed optical transitions in dilute magnetic AlAs/GaAs/ GaMnAs quantum wells grown on high substrate index by molecular beam epitaxy
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Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, we report the influence of high-index substrate orientation on the optical properties of dilute Mn containing a single quantum well (QW) structure grown by molecular beam epitaxy (MBE). The electronic band structure of the samples is calculated with finite element methods (FEM). Photomodulated reflectance (PR) spectroscopy is employed to determine the optical transition energies at room temperature. PR experimental results are analyzed with the Third Derivative Functional Form (TDFF) signal function. TDFF fitting shows that the optical transition starts below the fundamental GaAs bandgap energy for the samples grown on (311) B and (411) B-oriented substrates. Comparing TDFF fitting and calculated optical transition energies with FEM show that the optical transition occurs in type-I and type-II as direct and indirect transitions, respectively. Type-I and -II optical transitions are addressed concerning the electronic band structure of the sample grown on oriented substrates.
Açıklama
Anahtar Kelimeler
Optical transition, GaMnAs, Photomodulated reflectance, High index substrate, Finite element methods
Kaynak
Materials Science and Engineering B-Advanced Functional Solid-State Materials
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
290
