Determination of optimum Er-doping level to get high transparent and low resistive Cd1-xErxS thin films

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dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.authoridPOLAT, ISMAIL/0000-0002-5134-0246
dc.contributor.authorYilmaz, S.
dc.contributor.authorPolat, I.
dc.contributor.authorTomakin, M.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:44:55Z
dc.date.available2025-01-06T17:44:55Z
dc.date.issued2019
dc.description.abstractCd1-xErxS (x=0, 0.02, 0.04, 0.06, 0.08 and 0.10) thin films were produced by a chemical route on glass slides. The structural, morphological, optical and electrical properties of the grown samples were studied to obtain the optimum Er-doping level. Structural properties indicated that specimens had a hexagonal structure. Morphological analysis showed that the grain size of pristine CdS thin films remarkably reduced with rising Er-doping. The presence of Er atoms in CdS host structure was proved by energy dispersive of X-ray spectroscopy (EDS). The transparency of CdS thin films substantially improved after 10at.% Er-doping and a gradual decrease was acquired in the band gaps of the CdS samples with the increase of Er-doping. Photoluminescence data approved the existence of two main peaks corresponding to the green and yellow regions. Electrical properties of pristine CdS thin films were enhanced by Er-doping and the best electrical conclusions were obtained for Cd0.94Er0.06S thin films. Thus, it can be brought to an end that Er-doping enhanced both optical and electrical properties of pristine CdS thin films, which are of vital importance in optoelectronic applications.
dc.description.sponsorshipAdana Science and Technology University [17103029]
dc.description.sponsorshipAll the authors wish to thank Adana Science and Technology University for its financial support to this work by a project Number of 17103029.
dc.identifier.doi10.1007/s10854-019-00859-3
dc.identifier.endpage5669
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue6
dc.identifier.scopus2-s2.0-85061387232
dc.identifier.scopusqualityQ2
dc.identifier.startpage5662
dc.identifier.urihttps://doi.org/10.1007/s10854-019-00859-3
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3245
dc.identifier.volume30
dc.identifier.wosWOS:000462481400035
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectDoped Zno
dc.subjectSolar-Cell
dc.subjectPerformance
dc.subjectNanopartıcles
dc.subjectCo
dc.titleDetermination of optimum Er-doping level to get high transparent and low resistive Cd1-xErxS thin films
dc.typeArticle

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