Temporal Response of Dilute Nitride Multi-Quantum-Well Vertical Cavity Enhanced Photodetector
[ X ]
Tarih
2018
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The temporal response characteristics of a GaInNAs-based vertical resonant cavity enhanced photodetector device are presented for operation at lambda ae 1.3 mu m. The absorption layers of the device are composed of nine 7-nm-thick Ga0.65In0.35N0.02As0.98 quantum wells and are sandwiched between top and bottom AlGaAs/GaAs distributed Bragg reflectors (DBRs). The temperature dependence of the transient photoconductivity (TPC) under different light intensities and bias voltages is reported. Photoluminescence measurements were also performed on structures with and without the top DBR to determine their optical response under continuous illumination. The response time was measured using excitation from a 1047-nm pulsed neodymium-doped yttrium lithium fluoride laser with pulse width of 500 ps and repetition rate of 1 kHz. The rise time of the TPC was 2.27 ns at T = 50 K, decreasing to 1.79 ns at T = 300 K. The TPC decay time was 25.44 ns at T = 50 K, decreasing to 16.58 ns at T = 300 K. With detectivity of and noise-equivalent power of , the proposed device is faster and more sensitive with better signal-to-noise ratio compared with other GaInNAs-based resonant cavity enhanced photodetectors (RCEPDs) for operation at 1.3 mu m.
Açıklama
Anahtar Kelimeler
Transient photoconductivity (TPC), photoluminescence (PL), GaInNAs, detectivity, noise-equivalent power (NEP), internal gain, vertical resonant cavity photodetector
Kaynak
Journal of Electronic Materials
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
47
Sayı
1
