Structural and optical properties of diluted magnetic Ga1-xMnxAs-AlAs quantum wells grown on high-index GaAs planes
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Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Indian Acad Sciences
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
We report on the structural and optical properties of Ga1-xMnxAs-AlAs quantum wells (QWs) with x = 0.1% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and (411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used to investigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributed on the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregation was observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mn segregation. XRD measurements were used to determine 2 theta, d and cell parameters.
Açıklama
Anahtar Kelimeler
AFM, MBE, photoluminescence, XRD, quantum well, GaMnAs
Kaynak
Bulletin of Materials Science
WoS Q Değeri
Q4
Scopus Q Değeri
Q2
Cilt
40
Sayı
7
