Physical properties of CdS:Ga thin films synthesized by spray pyrolysis technique

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dc.authoridOLGAR, MEHMET ALI/0000-0002-6359-8316
dc.authoridToreli, Saltuk Bugra/0000-0001-9592-6540
dc.authoridYilmaz, Salih/0000-0002-3006-4473
dc.authoridPOLAT, ISMAIL/0000-0002-5134-0246
dc.contributor.authorYilmaz, S.
dc.contributor.authorPolat, I.
dc.contributor.authorOlgar, M. A.
dc.contributor.authorTomakin, M.
dc.contributor.authorToreli, S. B.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2025-01-06T17:44:53Z
dc.date.available2025-01-06T17:44:53Z
dc.date.issued2017
dc.description.abstractThis paper reports the investigation of physical properties of CdS:Ga thin films grown for the first time by a simple spray pyrolysis method as a function of Ga-doping level from 0 to 8 at.%. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive photoelectron spectroscopy, transmittance, photoluminescence, Hall effect and resistivity measurements are utilized to search for the structural, morphological, chemical, optical and electrical properties of as-prepared samples. XRD data confirm the presence of hexagonal structure with a strong (101) preferred orientation. SEM results show that the surface morphology varies significantly via Ga-doping, particularly 6 at.% doping level. Optical transparency is improved by the lower Ga-doping (2 and 4 at.%) whereas higher doping concentration (6 and 8 at.%) causes a poor transmission in the visible region. With respect to CdS (2.42 eV), the calculated band gap values at first enhances for 2 at.% Ga-doping and reaches to 2.43 eV. But, further increase in Ga-doping amount leads to a drop in the band gap value (2.39 eV) for 8 at.% Ga-doping. Electrical analyses display that 2 at.% Ga-doped CdS thin films exhibit a maximum carrier density and a minimum resistivity that are related to the substitutional incorporation of Ga3+ ions at Cd2+ ions. However, higher doping of Ga atoms into CdS gives rise to a gradual diminish in the carrier concentration and a rise in the resistivity. Based on all the data, it should be concluded that 2 at.% Ga-doped CdS thin films exhibit the best optical and electrical properties that can be used in the optoelectronic applications.
dc.description.sponsorshipAdana Science and Technology University [MUHDBF.MLZM.2015-16]
dc.description.sponsorshipThe work has been financially supported by the research fund of Adana Science and Technology University under the Project No. MUHDBF.MLZM.2015-16.
dc.identifier.doi10.1007/s10854-016-5908-0
dc.identifier.endpage3199
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84992111087
dc.identifier.scopusqualityQ2
dc.identifier.startpage3191
dc.identifier.urihttps://doi.org/10.1007/s10854-016-5908-0
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3230
dc.identifier.volume28
dc.identifier.wosWOS:000394352600009
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectChemıcal-Bath Deposıtıon
dc.subjectLıght-Emıttıng-Dıodes
dc.subjectElectrıcal-Propertıes
dc.subjectTransport-Propertıes
dc.subjectMagnetıc-Propertıes
dc.subjectSolar-Cell
dc.subjectLaser
dc.subjectPhotolumınescence
dc.subjectNanowıres
dc.subjectEmıssıon
dc.titlePhysical properties of CdS:Ga thin films synthesized by spray pyrolysis technique
dc.typeArticle

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