Comparative analysis of chloride-treated ZnTe films in photodetector devices

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dc.authoridBAYAZIT, Tuğba/0000-0002-8695-0298
dc.contributor.authorYilmaz, S.
dc.contributor.authorBasol, B. M.
dc.contributor.authorOlgar, M. A.
dc.contributor.authorBayazit, T.
dc.contributor.authorKucukomeroglu, T.
dc.contributor.authorBacaksiz, E.
dc.date.accessioned2026-02-27T07:33:19Z
dc.date.available2026-02-27T07:33:19Z
dc.date.issued2025
dc.description.abstractThe current work aims to demonstrate the potential effects of different Cl-treatments on ZnTe thin films as candidates for photodetector applications. X-ray diffraction (XRD) data revealed that the degree of preferred orientation along the (111) plane increased with Cl-treatments compared to the as-deposited ZnTe, and Cltreatment also promoted crystal growth in ZnTe. Surface images showed that the MgCl2-treated ZnTe sample exhibited a transformation of faceted grains into rounded shapes, resulting in a denser and more compact microstructure. Among the samples, the CdCl2-treated ZnTe demonstrated a sharper transition. The optical band gaps were 2.18 eV for the as-deposited ZnTe film, 2.16 eV for the ZnCl2-treated sample, 2.20 eV for the CdCl2-treated sample, and 2.19 eV for the MgCl2-treated sample. This indicates that ZnCl2 treatment slightly lowers the band gap, whereas CdCl2 and MgCl2 treatments lead to small increases. The current-voltage (I-V) curves displayed a steeper slope under both dark and illuminated conditions after ZnCl2, MgCl2, and CdCl2 treatments compared to the as-deposited ZnTe, likely due to enhanced conductivity. The CdCl2-treated ZnTe photodetectors (PDs) exhibited the fastest photoresponse, with rise and fall times of 13 m s each. Furthermore, CdCl2-treated ZnTe-based PDs achieved the highest sensitivity (S = 417 %), responsivity (R = 0.0024 A/W), and detectivity (D* = 1.4 x 107Jones) among the tested devices, suggesting that these PDs are suitable candidates for highperformance photodetector applications.
dc.identifier.doi10.1016/j.mssp.2025.109733
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.urihttp://dx.doi.org/10.1016/j.mssp.2025.109733
dc.identifier.urihttps://hdl.handle.net/20.500.14669/4544
dc.identifier.volume198
dc.identifier.wosWOS:001504087500001
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science In Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20260302
dc.subjectZnCl2-treated ZnTe
dc.subjectMgCl2-treated ZnTe
dc.subjectCdCl2-treated ZnTe
dc.subjectThin films
dc.subjectCSS
dc.subjectPhotodetection properties
dc.titleComparative analysis of chloride-treated ZnTe films in photodetector devices
dc.typeArticle

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