Effect of the deposition time on optical and electrical properties of semiconductor ZnS thin films prepared by chemical bath deposition

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dc.authoridERKEN, Ozge/0000-0002-6493-3059
dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridOzaslan, Dogan/0000-0001-5947-4663
dc.authoridGumus, Cebrail/0000-0003-1629-2338
dc.contributor.authorErken, O.
dc.contributor.authorGunes, M.
dc.contributor.authorOzaslan, D.
dc.contributor.authorGumus, C.
dc.date.accessioned2025-01-06T17:44:52Z
dc.date.available2025-01-06T17:44:52Z
dc.date.issued2017
dc.description.abstractSemiconductor ZnS thin films have been deposited by a chemical bath deposition (CBD) on a glass substrate at 80 degrees C with different deposition time (4, 6 and 8 h), The films have been further studied in order to determine the change in optical and electrical properties as a function of deposition time. The film thicknesses have been calculated between 210 - 1375 nm by using gravimetrical analysis. The optical properties of ZnS thin films have been determined by transmittance (%T) and absorbance (A) measurements by UV-Vis spectroscopy operated wavelength range between 300 and 1100 nm at room temperature. The optical transmittance values of ZnS thin films in the visible region of the electromagnetic spectrum have been found to be between 51-90%. The calculations indicate that the refractive index (n) in the visible region is between 1.40 and 2.45. The optical band gaps (E-g) of thin films have been calculated between 3.61-3.88 eV while the band edge sharpness values (B) are varied between 6.95 x 10(9)-8.96 x 10(10) eV/cm(2). The specific resistivity values (p) of the films are found to be between 1.08 x 10(5)-1.01 x 10(6) Omega.cm and exhibit an n-type conductivity by Hall measurement.
dc.description.sponsorshipCukurova University [FEF2012D9]
dc.description.sponsorshipThis work was supported by Cukurova University under FEF2012D9 project number.
dc.identifier.endpage477
dc.identifier.issn0019-5596
dc.identifier.issn0975-1041
dc.identifier.issue7
dc.identifier.startpage471
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3218
dc.identifier.volume55
dc.identifier.wosWOS:000429395900002
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherNatl Inst Science Communication-Niscair
dc.relation.ispartofIndian Journal of Pure & Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectZnS
dc.subjectThin film
dc.subjectCBD
dc.subjectOptical properties
dc.subjectElectrical properties
dc.titleEffect of the deposition time on optical and electrical properties of semiconductor ZnS thin films prepared by chemical bath deposition
dc.typeArticle

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