Enhancing near-infrared sensitivity with GaAs-based hybrid CMOS image sensors

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dc.contributor.authorYucekul, Mustafa Ozber
dc.contributor.authorTanrikulu, Mahmud Yusuf
dc.date.accessioned2026-02-27T07:32:54Z
dc.date.available2026-02-27T07:32:54Z
dc.date.issued2025
dc.description.abstractComplementary metal-oxide-semiconductor (CMOS) image sensors are widely used in applications such as time-of-flight systems, machine vision, mobile devices, and medical imaging due to their versatility and compact structure. However, enhancing their sensitivity in the near-infrared (NIR) region remains a significant challenge, largely due to insufficient light absorption within this spectral range. We propose an innovative solution to this limitation by integrating GaAs semiconductor material with silicon in a hybrid CMOS image sensor. The design incorporates a 2 mu mx2 mu m pixel architecture combined with a deep trench isolation structure, which significantly enhances light absorption and efficiency in the NIR region. This approach achieves more than a twofold increase in NIR sensitivity in the 800- to 1000-nm wavelength range compared with conventional backside-illuminated CMOS image sensors. Simulation results highlight the substantial potential of the GaAs-based hybrid structure in advancing the performance of CMOS image sensors for applications requiring improved sensitivity in the NIR region. To the best of our knowledge, the proposed structure is the first of its kind reported in the literature.
dc.identifier.doi10.1117/1.OE.64.8.087102
dc.identifier.issn0091-3286
dc.identifier.issn1560-2303
dc.identifier.issue8
dc.identifier.urihttp://dx.doi.org/10.1117/1.OE.64.8.087102
dc.identifier.urihttps://hdl.handle.net/20.500.14669/4375
dc.identifier.volume64
dc.identifier.wosWOS:001565529800029
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherSPIE-Society of Photo-Optical Instrumentation Engineers
dc.relation.ispartofOptical Engineering
dc.relation.publicationcategoryMakale - Uluslararas� Hakemli Dergi - Kurum ��retim Eleman�
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20260302
dc.subjectCMOS image sensor
dc.subjectnear-infrared
dc.subjectfinite-difference time-domain simulation
dc.subjectGaAs
dc.titleEnhancing near-infrared sensitivity with GaAs-based hybrid CMOS image sensors
dc.typeArticle

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