Determination of non-equilibrium electron energy and momentum relaxation rates in GaAs/AlGaAs multiple quantum well

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dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.contributor.authorGunes, M.
dc.date.accessioned2025-01-06T17:38:05Z
dc.date.available2025-01-06T17:38:05Z
dc.date.issued2014
dc.description.abstractThe results of the experimental techniques used in the determination of the power and momentum losses from a 2DEG were presented. These are the hot electron photoluminescence (HEPL), and mobility mapping techniques which involve the measurements of PL in synchronization with applied voltage pulse, high field I-V and Hall mobility. In the presence of electric field the carriers are heated, and the high energy-tail of the PL, which is described by Maxwell-Boltzmann distribution, can be used to obtain the temperature of the non-equilibrium carriers. The second technique called mobility mapping is used to verify the temperature of the non-equilibrium carriers.
dc.identifier.endpage381
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.issue5-6
dc.identifier.startpage378
dc.identifier.urihttps://hdl.handle.net/20.500.14669/2471
dc.identifier.volume8
dc.identifier.wosWOS:000338487000007
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.ispartofOptoelectronics and Advanced Materials-Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241211
dc.subjectGaAs
dc.subjectAlGaAs
dc.subject2DEG
dc.subjectElectron temperature
dc.titleDetermination of non-equilibrium electron energy and momentum relaxation rates in GaAs/AlGaAs multiple quantum well
dc.typeArticle

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