Physical properties of Cu2O thin films prepared by silar method

dc.authoridGunes, Mustafa/0000-0002-7974-0540
dc.authoridOzaslan, Dogan/0000-0001-5947-4663
dc.contributor.authorOzaslan, Dogan
dc.contributor.authorGunes, Mustafa
dc.contributor.authorGumus, Cebrail
dc.date.accessioned2025-01-06T17:44:21Z
dc.date.available2025-01-06T17:44:21Z
dc.date.issued2017
dc.description.abstractPolycrystalline Cu2O thin films were obtained on glass substrates using by silar method at 70 degrees C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu2O thin films UV/vis spectrophotometer was used. Optical transmittance (T%) values of the Cu2O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu20 of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (E-g) of the films were found to be 2.53-2.62 eV.
dc.identifier.doi10.5505/pajes.2016.58672
dc.identifier.endpage857
dc.identifier.issn1300-7009
dc.identifier.issn2147-5881
dc.identifier.issue7
dc.identifier.startpage854
dc.identifier.urihttps://doi.org/10.5505/pajes.2016.58672
dc.identifier.urihttps://hdl.handle.net/20.500.14669/3022
dc.identifier.volume23
dc.identifier.wosWOS:000443172200007
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.language.isotr
dc.publisherPamukkale Univ
dc.relation.ispartofPamukkale University Journal of Engineering Sciences-Pamukkale Universitesi Muhendislik Bilimleri Dergisi
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241211
dc.subjectSilar method
dc.subjectThin film
dc.subjectCu2O
dc.subjectPhysical properties
dc.titlePhysical properties of Cu2O thin films prepared by silar method
dc.typeArticle

Dosyalar