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    Atomic layer deposition synthesized TiOx thin films and their application as microbolometer active materials
    (A V S Amer Inst Physics, 2016) Tanrikulu, Mahmud Yusuf; Rasouli, Hamid Reza; Ghaffari, Mohammad; Topalli, Kagan; Okyay, Ali Kemal
    This paper demonstrates the possible usage of TiOx thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as -9%/K near room temperature is obtained. The noise properties of TiOx films are characterized. It is shown that TiOx films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications. (C) 2016 American Vacuum Society.