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    Physical properties of Cu2O thin films prepared by silar method
    (Pamukkale Univ, 2017) Ozaslan, Dogan; Gunes, Mustafa; Gumus, Cebrail
    Polycrystalline Cu2O thin films were obtained on glass substrates using by silar method at 70 degrees C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu2O thin films UV/vis spectrophotometer was used. Optical transmittance (T%) values of the Cu2O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu20 of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (E-g) of the films were found to be 2.53-2.62 eV.