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    Effect of the deposition time on optical and electrical properties of semiconductor ZnS thin films prepared by chemical bath deposition
    (Natl Inst Science Communication-Niscair, 2017) Erken, O.; Gunes, M.; Ozaslan, D.; Gumus, C.
    Semiconductor ZnS thin films have been deposited by a chemical bath deposition (CBD) on a glass substrate at 80 degrees C with different deposition time (4, 6 and 8 h), The films have been further studied in order to determine the change in optical and electrical properties as a function of deposition time. The film thicknesses have been calculated between 210 - 1375 nm by using gravimetrical analysis. The optical properties of ZnS thin films have been determined by transmittance (%T) and absorbance (A) measurements by UV-Vis spectroscopy operated wavelength range between 300 and 1100 nm at room temperature. The optical transmittance values of ZnS thin films in the visible region of the electromagnetic spectrum have been found to be between 51-90%. The calculations indicate that the refractive index (n) in the visible region is between 1.40 and 2.45. The optical band gaps (E-g) of thin films have been calculated between 3.61-3.88 eV while the band edge sharpness values (B) are varied between 6.95 x 10(9)-8.96 x 10(10) eV/cm(2). The specific resistivity values (p) of the films are found to be between 1.08 x 10(5)-1.01 x 10(6) Omega.cm and exhibit an n-type conductivity by Hall measurement.
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    Öğe
    Effect of the deposition time on optical and electrical properties of semiconductor ZnS thin films prepared by chemical bath deposition
    (National Institute of Science Communication and Information Resources (NISCAIR), 2017) Erken, O.; Gunes, M.; Ozaslan, D.; Gumus, C.
    Semiconductor ZnS thin films have been deposited by a chemical bath deposition (CBD) on a glass substrate at 80 °C with different deposition time (4, 6 and 8 h). The films have been further studied in order to determine the change in optical and electrical properties as a function of deposition time. The film thicknesses have been calculated between 210 - 1375 nm by using gravimetrical analysis. The optical properties of ZnS thin films have been determined by transmittance (%T) and absorbance (A) measurements by UV-Vis spectroscopy operated wavelength range between 300 and 1100 nm at room temperature. The optical transmittance values of ZnS thin films in the visible region of the electromagnetic spectrum have been found to be between 51-90%. The calculations indicate that the refractive index (n) in the visible region is between 1.40 and 2.45. The optical band gaps (Eg) of thin films have been calculated between 3.61-3.88 eV while the band edge sharpness values (B) are varied between 6.95 × 109-8.96 × 1010 eV/cm2. The specific resistivity values (p) of the films are found to be between 1.08 × 105-1.01 × 106 ?cm and exhibit an n-Type conductivity by Hall measurement.
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    Öğe
    Study of the electronic properties of Cu2O thin films by X-ray absorption spectroscopy
    (Elsevier Gmbh, 2018) Ozaslan, D.; Ozkendir, O. M.; Gunes, M.; Ufuktepe, Y.; Gumus, C.
    We have investigated the thickness effect of Cu2O thin films on the electronic structure deposited by the successive ionic layer adsorption and reaction (SILAR) method. Crystal, optical and electronic properties of the Cu2O thin films were studied by X-ray diffraction (XRD) and X-ray absorption near edge spectroscopy (XANES). According to the crystal structure analysis, films were determined to be mainly in cubic Cu2O structures. The XANES study have shown that Cu L-2,L-3 absorption edges are influenced by the chemical state of the Cu atoms strongly and a sole ionic picture is not enough to describe the L-edge spectra of Cu2O. It has been observed that Cu L-2,L-3-edge spectra of the samples present typical electronic features of both monovalent Cu (I) and Cu (II) divalent states. The grains have an average size of 2.5 nm and XRD measurements revealed that (111) plane is the preferential orientation. Optical studies have shown that the optical absorption edge shifted to higher energies as the film thickness increases. It was found that the optical band gap was significantly influenced by the film thickness. Our results exhibited that the increment of the optical band gap of Cu2O thin films associated with a significant decrease of Cu-Cu interaction as a result of the increase in the film thickness. (C) 2017 Elsevier GmbH. All rights reserved.
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    The effect of annealing temperature on the physical properties of Cu2O thin film deposited by SILAR method
    (Elsevier, 2020) Ozaslan, D.; Erken, O.; Gunes, M.; Gumus, C.
    Cu2O film was deposited on a glass substrate at 70 degrees C by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The Cu2O film was annealed in an air atmosphere at 100 degrees C, 300 degrees C, and 500 degrees C temperatures for 1 h and the effect of the annealing temperature on the physical properties was investigated. The phase-transition temperature that corresponds to the transformation from Cu2O to CuO was occurred at temperature of approximately 300 degrees C with annealing process. The energy band gap (E-g) was reduced from 2.57 eV to 1.91 eV with the increasing annealing temperature. Hall measurement revealed that the film showed p-type conductivity and the resistivity (rho) of Cu2O deposited at 70 degrees C and annealed 100 degrees C were calculated as 6.12 x 10(4) and 7.44 x 10(3 )Omega cm, respectively, while the film annealed at 300 degrees C and 500 degrees C the resistivity of CuO was found to be 8.23 x 10(3) and 5.11 x 10(2) Omega em, respectively.