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    Enhancement in the optical and electrical properties of CdS thin films through Ga and K co-doping
    (Elsevier Sci Ltd, 2017) Yilmaz, S.; Toreli, S. B.; Polat, I.; Olgar, M. A.; Tomakin, M.; Bacaksiz, E.
    In the presented work, Ga-doped CdS and (Ga-K)-co-doped CdS thin films are grown on glass substrates at a temperature of 400 degrees C through spray pyrolysis. Influence of K-doping on structural, morphological, optical and electrical characteristics of CdS:Ga thin films are examined. K level is changed from 1 at% to 5 at% for CdS:Ga samples just as Ga concentration is fixed 2 at% for all CdS thin films. It is observed from the X-ray diffraction data that all the samples exhibit hexagonal structure and an increase level of K in Ga-doped CdS samples causes a degradation in the crystal quality. Energy-dispersive X-ray spectroscopy measurements illustrate that the best stoichiometric film is acquired when K content is 2 at% in Ga-doped CdS films. Optical transmission curves demonstrate that CdS:Ga thin films exhibit the best optical transparency in the visible range for 4 at% K content compared to other specimens. A widening in the optical bandgap is unveiled after K-dopings. It is obtained that maximum band gap value is found as 2.45 eV for 3 at%, 4 at% and 5 at%. K -dopings while Ga-doped CdS thin films display the band gap value of 2.43 eV. From photoluminescence measurements, the most intensified peak is observed in the deep level emission after incorporation of the 4 at% K atoms. As for electrical characterization results, the resistivity reduces and the carrier density improves with the increase of K concentration from 1 at% to 4 at%. Based on all the data, it can be deduced that 4 at% K-doped CdS:Ga thin films show the best optical and electrical behavior, which can be utilized for solar cell devices.
  • [ X ]
    Öğe
    Enhancement in the optical and electrical properties of CdS thin films through Ga and K co-doping
    (Elsevier Sci Ltd, 2017) Yilmaz, S.; Toreli, S. B.; Polat, I.; Olgar, M. A.; Tomakin, M.; Bacaksiz, E.
    In the presented work, Ga-doped CdS and (Ga-K)-co-doped CdS thin films are grown on glass substrates at a temperature of 400 degrees C through spray pyrolysis. Influence of K-doping on structural, morphological, optical and electrical characteristics of CdS:Ga thin films are examined. K level is changed from 1 at% to 5 at% for CdS:Ga samples just as Ga concentration is fixed 2 at% for all CdS thin films. It is observed from the X-ray diffraction data that all the samples exhibit hexagonal structure and an increase level of K in Ga-doped CdS samples causes a degradation in the crystal quality. Energy-dispersive X-ray spectroscopy measurements illustrate that the best stoichiometric film is acquired when K content is 2 at% in Ga-doped CdS films. Optical transmission curves demonstrate that CdS:Ga thin films exhibit the best optical transparency in the visible range for 4 at% K content compared to other specimens. A widening in the optical bandgap is unveiled after K-dopings. It is obtained that maximum band gap value is found as 2.45 eV for 3 at%, 4 at% and 5 at%. K -dopings while Ga-doped CdS thin films display the band gap value of 2.43 eV. From photoluminescence measurements, the most intensified peak is observed in the deep level emission after incorporation of the 4 at% K atoms. As for electrical characterization results, the resistivity reduces and the carrier density improves with the increase of K concentration from 1 at% to 4 at%. Based on all the data, it can be deduced that 4 at% K-doped CdS:Ga thin films show the best optical and electrical behavior, which can be utilized for solar cell devices.
  • [ X ]
    Öğe
    Physical properties of CdS:Ga thin films synthesized by spray pyrolysis technique
    (Springer, 2017) Yilmaz, S.; Polat, I.; Olgar, M. A.; Tomakin, M.; Toreli, S. B.; Bacaksiz, E.
    This paper reports the investigation of physical properties of CdS:Ga thin films grown for the first time by a simple spray pyrolysis method as a function of Ga-doping level from 0 to 8 at.%. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive photoelectron spectroscopy, transmittance, photoluminescence, Hall effect and resistivity measurements are utilized to search for the structural, morphological, chemical, optical and electrical properties of as-prepared samples. XRD data confirm the presence of hexagonal structure with a strong (101) preferred orientation. SEM results show that the surface morphology varies significantly via Ga-doping, particularly 6 at.% doping level. Optical transparency is improved by the lower Ga-doping (2 and 4 at.%) whereas higher doping concentration (6 and 8 at.%) causes a poor transmission in the visible region. With respect to CdS (2.42 eV), the calculated band gap values at first enhances for 2 at.% Ga-doping and reaches to 2.43 eV. But, further increase in Ga-doping amount leads to a drop in the band gap value (2.39 eV) for 8 at.% Ga-doping. Electrical analyses display that 2 at.% Ga-doped CdS thin films exhibit a maximum carrier density and a minimum resistivity that are related to the substitutional incorporation of Ga3+ ions at Cd2+ ions. However, higher doping of Ga atoms into CdS gives rise to a gradual diminish in the carrier concentration and a rise in the resistivity. Based on all the data, it should be concluded that 2 at.% Ga-doped CdS thin films exhibit the best optical and electrical properties that can be used in the optoelectronic applications.