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    Alloying and phase transformation in CdS/CdSe bilayers annealed with or without CdCl2
    (Elsevier Sci Ltd, 2019) Ciris, A.; Basol, B. M.; Yilmaz, S.; Atasoy, Y.; Tomakin, M.; Kucukomeroglu, T.; Bacaksiz, E.
    The present paper studies the structural, compositional, morphological and optical properties of thin CdS/CdSe stacks annealed in an inert atmosphere or subjected to a CdCl2 treatment. The bilayer stacks were fabricated by chemical bath deposition (CBD) of a 50 nm thick CdS layer followed by evaporation of a CdSe film with equal thickness. It was found that when this stack was annealed at 400 degrees C for up to 10 min, no appreciable intermixing/alloying between the two layers was detected. Upon heating for 5-10 min in presence of a CdCl2 layer disposed over the CdSe film, however, led to appreciable alloying and formation of CdSSe, which was confirmed through XRD, optical transmission and room temperature photoluminescence measurements. XRD data further showed that the CdS layer in the CdS/CdSe stack had nano-amorphous structure that did not change upon annealing in inert atmosphere. The CdSe layer of the stack, which had a cubic structure, also preserved its phase upon annealing in inert atmosphere. When the CdS/CdSe stack was CdCl2 treated, the phase of the CdSSe alloy formed was transformed to hexagonal. These observations may have consequences in applications where CdS/CdSe bilayers are formed within device structures and subjected to various types of heat treatments.
  • [ X ]
    Öğe
    Alloying and phase transformation in CdS/CdSe bilayers annealed with or without CdCl2
    (Elsevier Sci Ltd, 2019) Ciris, A.; Basol, B. M.; Yilmaz, S.; Atasoy, Y.; Tomakin, M.; Kucukomeroglu, T.; Bacaksiz, E.
    The present paper studies the structural, compositional, morphological and optical properties of thin CdS/CdSe stacks annealed in an inert atmosphere or subjected to a CdCl2 treatment. The bilayer stacks were fabricated by chemical bath deposition (CBD) of a 50 nm thick CdS layer followed by evaporation of a CdSe film with equal thickness. It was found that when this stack was annealed at 400 degrees C for up to 10 min, no appreciable intermixing/alloying between the two layers was detected. Upon heating for 5-10 min in presence of a CdCl2 layer disposed over the CdSe film, however, led to appreciable alloying and formation of CdSSe, which was confirmed through XRD, optical transmission and room temperature photoluminescence measurements. XRD data further showed that the CdS layer in the CdS/CdSe stack had nano-amorphous structure that did not change upon annealing in inert atmosphere. The CdSe layer of the stack, which had a cubic structure, also preserved its phase upon annealing in inert atmosphere. When the CdS/CdSe stack was CdCl2 treated, the phase of the CdSSe alloy formed was transformed to hexagonal. These observations may have consequences in applications where CdS/CdSe bilayers are formed within device structures and subjected to various types of heat treatments.
  • [ X ]
    Öğe
    CdCl2 treatment and its role in enhancing photodetection properties of CdTe and Cd1-xZnxTe films
    (Elsevier, 2025) Yilmaz, S.; Basol, B. M.; Polat, I.; Daday, M. Taykurt; Tomakin, M.; Kucukomeroglu, T.; Bacaksiz, E.
    Close space sublimated CdTe and Cd1-xZnxTe (CZT) films were grown on glass substrates and CdCl2 activation was applied on these films to improve their physical, optical and electrical characteristics for photodetector applications. X-ray diffraction data showed that CdCl2 treatment of CdTe caused a reduction in the dislocation density and microstrain, whereas Zn incorporation/CdCl2 treatment slightly increased these values compared to the as-deposited CdTe films. Morphological examination indicated that CdCl2 activation transformed grains from faceted to rounded shape for both CdTe and CZT films. A band gap enlargement was observed from 1.45 eV to 1.47 eV for both CdTe and CZT films upon CdCl2 treatment. CdCl2-treated CZT films were used to fabricate photodetectors that exhibited the highest performance with a rise/fall time of 27/28 ms, sensitivity of 1301 %, responsivity of 0.0143 A/W, detectivity of 5.7x107 Jones and external quantum efficiency of 4.0 % under blue light illumination at 2 V.