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    Öğe
    Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material
    (Wiley-V C H Verlag Gmbh, 2014) Battal, Enes; Bolat, Sami; Tanrikulu, M. Yusuf; Okyay, Ali Kemal; Akin, Tayfun
    ZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as -10.4%K-1 near room temperature with the ZnO thin film grown at 120 degrees C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 degrees C grown ZnO has a corner frequency of 2kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 degrees C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications.
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    Öğe
    Realization of Single Layer Microbolometer Detector Pixel Using ZnO Material
    (IEEE-Inst Electrical Electronics Engineers Inc, 2020) Tanrikulu, M. Yusuf; Yildizak, Cigdem; Okyay, Ali K.; Akar, Orhan; Sarac, Adem; Akin, Tayfun
    This paper presents the realization of a single layer microbolometer pixel fabricated using only ZnO material coated with atomic layer deposition. Due to the stress-free nature and high temperature coefficient of resistance of the ALD coated ZnO material, it can be used both as structural and active layers in microbolometer detectors. The design, simulations, and the fabrication optimization of two types of single layer ZnO microbolometer having pixel pitch of 35 mu m are shown in this study. The designed pixels have thermal conductances of 58 nW/K and 476 nW/K while their thermal time constant values are 1.62 ms and 0.24 ms. The temperature coefficient of resistance and 1/f corner frequency of fabricated resistors are measured to be -10 %/K and 302.5 Hz respectively. The absorption coefficients of both pixels are measured to be around 40 % in 8-12 mu m wavelength range. The fabricated pixels are the first examples of successfully obtained single layer ZnO microbolometer pixels in literature and the proposed structures can be used to decrease the design complexities and fabrication costs and increase the yield of the detectors making them possible to be used in low-cost applications.
  • [ X ]
    Öğe
    Single layer microbolometer detector pixel using ZnO material
    (Spie-Int Soc Optical Engineering, 2018) Tanrikulu, M. Yusuf; Yildizak, Cigdem; Okyay, Ali K.; Akar, Orhan; Sarac, Adem; Akin, Tayfun
    This paper presents the development of a single layer microbolometer pixel fabricated using only ZnO material coated with atomic layer deposition. Due to the stress-free nature and high temperature coefficient of resistance of the ALD coated ZnO material, it can be used both as structural and active layers in microbolometer detectors. The design, simulations, and the fabrication optimization of 35. m single layer ZnO microbolometers are shown in this study. The designed pixel has a thermal conductance of 3.4x10(-7) W/K and a thermal time constant of 1.34 ms while it has a maximum displacement of 0.43 mu m under 1000g acceleration. This structure can be used to decrease the design complexities and fabrication costs and increase the yield of the detectors making them possible to be used in low-cost applications.