Yilmaz, S.Polat, I.Tomakin, M.Kucukomeroglu, T.Bacaksiz, E.2025-01-062025-01-0620230947-83961432-063010.1007/s00339-023-06860-22-s2.0-85165692059https://doi.org/10.1007/s00339-023-06860-2https://hdl.handle.net/20.500.14669/2041The present work demonstrates a comparison of performance of Cu, In and Ga-doped CdSe thin films-based photodetectors. Structural, morphological, optical and electrical investigation of Cu, In and Ga-doped CdSe thin films prepared by close space sublimation on glass slides is also achieved. It is obtained that Cu, In and Ga-doped CdSe thin films have a good crystal quality with a hexagonal structure in the preferred orientation along (002) plane. Morphological examination shows that Cu-doped CdSe thin films grow in the porous microstructure while In and Ga-doped CdSe films possess compact and uniform morphology without any voids. Transparency of In and Ga-doped CdSe films are higher than that of Cu-doped CdSe throughout the entire spectrum. Band gap values of all the samples are determined to be almost 1.72 eV. Photoluminescence data indicate that Ga-doped CdSe thin films display a deep level band at the lowest peak intensity, which is the indication of less defected structure. All the samples exhibit n-type conductivity. Additionally, the maximum carrier density and the minimum resistivity are reached for In-doped CdSe thin films as 1.75 x 10(16) cm(-3) and 6.12 & omega; cm, respectively. Rise time of 28 ms and fall time of 25 ms are obtained for Cu-doped CdSe thin films-based photodetector, which are the fastest photoresponse within all the devices. Furthermore, Cu-doped CdSe thin films-based device has a responsivity of 1.20 x 10(-2) A/W and a detectivity of 1.20 x 10(9) Jones that makes Cu-doped CdSe thin films-based device as a strong candidate for high sensitive photodetector applications.eninfo:eu-repo/semantics/closedAccessCdSe thin filmsClose space sublimationCuIn and Ga-dopingPhotodetectorArticle8Q2129WOS:001034612400003Q2