Ozaslan, D.Erken, O.Gunes, M.Gumus, C.2025-01-062025-01-0620200921-45261873-213510.1016/j.physb.2019.4119222-s2.0-85076710148https://doi.org/10.1016/j.physb.2019.411922https://hdl.handle.net/20.500.14669/2183Cu2O film was deposited on a glass substrate at 70 degrees C by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The Cu2O film was annealed in an air atmosphere at 100 degrees C, 300 degrees C, and 500 degrees C temperatures for 1 h and the effect of the annealing temperature on the physical properties was investigated. The phase-transition temperature that corresponds to the transformation from Cu2O to CuO was occurred at temperature of approximately 300 degrees C with annealing process. The energy band gap (E-g) was reduced from 2.57 eV to 1.91 eV with the increasing annealing temperature. Hall measurement revealed that the film showed p-type conductivity and the resistivity (rho) of Cu2O deposited at 70 degrees C and annealed 100 degrees C were calculated as 6.12 x 10(4) and 7.44 x 10(3 )Omega cm, respectively, while the film annealed at 300 degrees C and 500 degrees C the resistivity of CuO was found to be 8.23 x 10(3) and 5.11 x 10(2) Omega em, respectively.eninfo:eu-repo/semantics/closedAccessCu2OAnnealingCuOSILARXRDFE-SEMArticleQ2580WOS:000510641000029Q3